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http://acervodigital.unesp.br/handle/11449/37010
- Title:
- Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
- Universidade de São Paulo (USP)
- Universidade Estadual Paulista (UNESP)
- Universidade Estadual de Campinas (UNICAMP)
- Univ Paderborn
- 0022-0248
- The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier B.V. B.V. All rights reserved.
- 1-May-2003
- Journal of Crystal Growth. Amsterdam: Elsevier B.V., v. 252, n. 1-3, p. 208-212, 2003.
- 208-212
- Elsevier B.V.
- photoluminescence
- photoreflectance
- molecular beam epitaxy
- GaN
- http://dx.doi.org/10.1016/S0022-0248(02)02517-4
- Acesso restrito
- outro
- http://repositorio.unesp.br/handle/11449/37010
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