Please use this identifier to cite or link to this item:
- Qualitative evaluation of active potential barriers in SnO2-based polycrystalline devices by electrostatic force microscopy
- Universidade Estadual Paulista (UNESP)
- This paper discuss the qualitative use of electrostatic force microscopy to study the grain boundary active potential barrier present in dense SnO2-based polycrystalline semiconductors. The effect of heat treatment under rich- and poor-oxygen atmospheres was evaluated while especially considering the number of active barriers at grain boundary regions. The results show that the number of active barriers decrease after heat treatment in an oxygen-poor atmosphere and increase after heat treatment in oxygen-rich atmospheres. The observed effect was explained by considering the presence of oxidized transition metal elements segregated at grain boundary regions which leads to the p-type character of this region, in agreement with the atomic barrier formation mechanism in metal oxide varistor systems.
- Applied Physics A-materials Science & Processing. New York: Springer, v. 87, n. 4, p. 793-796, 2007.
- Acesso restrito
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.