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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/39209
Title: 
Very large dielectric constant of highly oriented Pb1-xBaxTiO3 thin films prepared by chemical deposition
Author(s): 
Institution: 
  • Universidade Federal de São Carlos (UFSCar)
  • Universidade Estadual Paulista (UNESP)
ISSN: 
0003-6951
Abstract: 
Highly (100) oriented Pb0.8Ba0.2TiO3/LaNiO3 structures were grown on LaAlO3(100) substrates by using a wet, soft chemical method and crystallized by the microwave oven technique. The Au/PBT/LaNiO3/LaAlO3 capacitor shows a hysteresis loop with remnant polarization, P-r, of 15 muC/cm(2), and coercive field, E-c, of 47 kV/cm at an applied voltage of 3 V, along with a dielectric constant over 1800. Atomic force microscopy showed that Pb0.8Ba0.2TiO3 is composed of large grains about 300 nm. The experimental results demonstrated that the microwave preparation is rapid, clean, and energy efficient. Therefore, we demonstrated that the combination of the soft chemical method with the microwave process is a promising technique to grow highly oriented thin films with excellent dielectric and ferroelectric properties, which can be used in various integrated device applications. (C) 2004 American Institute of Physics.
Issue Date: 
12-Jan-2004
Citation: 
Applied Physics Letters. Melville: Amer Inst Physics, v. 84, n. 2, p. 248-250, 2004.
Time Duration: 
248-250
Publisher: 
American Institute of Physics (AIP)
Source: 
http://dx.doi.org/10.1063/1.1637150
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/39209
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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