Please use this identifier to cite or link to this item:
http://acervodigital.unesp.br/handle/11449/39325
- Title:
- Effect of spin-polarized subbands in the inhomogeneous hole gas providing the indirect exchange in GaMnAs bilayers
- Universidade Estadual Paulista (UNESP)
- Univ Paris 06
- 0304-8853
- The magnetic order resulting from the indirect exchange in the metallic phase of a (Ga,Mn)As/GaAs double layer structure is studied via Monte Carlo simulation. The polarization of the hole gas is taken into account, establishing a self-consistency between the magnetic order and the electronic structure. The Curie-Weiss temperatures calculated for these low-dimensional systems are in the range of 50-80 K, and the dependence of the transition temperature with the GaAs separation layer is established. (C) 2003 Published by Elsevier B.V.
- 1-May-2004
- Journal of Magnetism and Magnetic Materials. Amsterdam: Elsevier B.V., v. 272, p. 351-352, 2004.
- 351-352
- Elsevier B.V.
- diluted magnetic semiconductor
- (Ga,Mn)As
- spintronics
- http://dx.doi.org/10.1016/j.jmmm.2003.11.383
- Acesso restrito
- outro
- http://repositorio.unesp.br/handle/11449/39325
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.