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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/39325
Title: 
Effect of spin-polarized subbands in the inhomogeneous hole gas providing the indirect exchange in GaMnAs bilayers
Author(s): 
Institution: 
  • Universidade Estadual Paulista (UNESP)
  • Univ Paris 06
ISSN: 
0304-8853
Abstract: 
The magnetic order resulting from the indirect exchange in the metallic phase of a (Ga,Mn)As/GaAs double layer structure is studied via Monte Carlo simulation. The polarization of the hole gas is taken into account, establishing a self-consistency between the magnetic order and the electronic structure. The Curie-Weiss temperatures calculated for these low-dimensional systems are in the range of 50-80 K, and the dependence of the transition temperature with the GaAs separation layer is established. (C) 2003 Published by Elsevier B.V.
Issue Date: 
1-May-2004
Citation: 
Journal of Magnetism and Magnetic Materials. Amsterdam: Elsevier B.V., v. 272, p. 351-352, 2004.
Time Duration: 
351-352
Publisher: 
Elsevier B.V.
Keywords: 
  • diluted magnetic semiconductor
  • (Ga,Mn)As
  • spintronics
Source: 
http://dx.doi.org/10.1016/j.jmmm.2003.11.383
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/39325
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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