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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/42118
Title: 
Influence of Ga incorporation on photoinduced phenomena in Ge-S based glasses
Author(s): 
Institution: 
  • Universidade Estadual Paulista (UNESP)
  • Univ Rennes
ISSN: 
0022-3093
Abstract: 
To study the influence of Ga addition on photoinduced effect, GaGeS glasses with constant atomic ratio S/Ge = 2.6 have been prepared. Using Raman spectroscopy, we have reported the effect of Ga on the structural behavior of these glasses. An increase of the glass transition temperature T(g), the linear refractive index and the density have been observed with increasing gallium content. The photoinduced phenomena have been examined through the influence of time exposure and power density, when exposed to above light bandgap (3.53 eV). The correlation between photoinduced phenomena and Ga content in such glasses are shown hereby. (C) 2009 Elsevier B.V. All rights reserved.
Issue Date: 
1-Oct-2009
Citation: 
Journal of Non-crystalline Solids. Amsterdam: Elsevier B.V., v. 355, n. 37-42, p. 1884-1889, 2009.
Time Duration: 
1884-1889
Publisher: 
Elsevier B.V.
Keywords: 
  • Raman scattering
  • Chalcogenides
  • Photoinduced effects
Source: 
http://dx.doi.org/10.1016/j.jnoncrysol.2009.04.046
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/42118
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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