Piezoelectric behavior of SrRuO(3) buffered lanthanum modified bismuth ferrite thin films grown by chemical method

Abstract

Lanthanum modified bismuth ferrite thin film (BLFO) of pure perovskite phase was deposited on SrRuO(3)-buffered Pt/TiO(2)/SiO(2)/Si (100) substrates by soft chemical method. (111)-preferred oriented BLFO film was coherently grown at a temperature of 500 degrees C. The crystal structure of the film was characterized by using x-ray diffraction. The spontaneous polarization of the film was 25 mu C/cm(2). The film has a piezoelectric coefficient d(33) equal to 85 pm/V and a weak pulse width dependence indicating intrinsic ferroelectricity. Retention measurement showed no decay of polarization while piezoelectric response was greatly improved by the conductor electrode. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2979692]