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http://acervodigital.unesp.br/handle/11449/65732
- Title:
- The influence of crystallization route on the SrBi2Nb2O9 thin films
- Universidade Federal de São Carlos (UFSCar)
- Universidade Estadual Paulista (UNESP)
- 0884-2914
- Polycrystalline SrBi2Nb2O9-layered ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrate using the polymeric precursors solution. The dip-coated films were specular and crack-free and crystallized during firing at 700 °C. Single-, double-, and triple-layered films were obtained by several dips in the deposition solution, and the influence of crystallization between each dip was studied. Microstructure and morphological evaluation were followed by grazing incident x-ray diffraction (GIXRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystallized layer route present a dense microstructure with spherical grains, with a preferential orientation in the 〈215〉 direction; films obtained using the intermediate-amorphous layer route are polycrystalline and present elongated grains around 250 nm in size.
- 1-Mar-1999
- Journal of Materials Research, v. 14, n. 3, p. 1026-1031, 1999.
- 1026-1031
- Crystal microstructure
- Crystal orientation
- Crystallization
- Deposition
- Ferroelectric materials
- Grain size and shape
- Morphology
- Multilayers
- Perovskite
- Polycrystalline materials
- Strontium compounds
- Synthesis (chemical)
- Grazing incident X ray diffraction (GIXRD) analysis
- Dielectric films
- http://dx.doi.org/10.1557/JMR.1999.0136
- Acesso restrito
- outro
- http://repositorio.unesp.br/handle/11449/65732
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