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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/65732
Title: 
The influence of crystallization route on the SrBi2Nb2O9 thin films
Author(s): 
Institution: 
  • Universidade Federal de São Carlos (UFSCar)
  • Universidade Estadual Paulista (UNESP)
ISSN: 
0884-2914
Abstract: 
Polycrystalline SrBi2Nb2O9-layered ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrate using the polymeric precursors solution. The dip-coated films were specular and crack-free and crystallized during firing at 700 °C. Single-, double-, and triple-layered films were obtained by several dips in the deposition solution, and the influence of crystallization between each dip was studied. Microstructure and morphological evaluation were followed by grazing incident x-ray diffraction (GIXRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystallized layer route present a dense microstructure with spherical grains, with a preferential orientation in the 〈215〉 direction; films obtained using the intermediate-amorphous layer route are polycrystalline and present elongated grains around 250 nm in size.
Issue Date: 
1-Mar-1999
Citation: 
Journal of Materials Research, v. 14, n. 3, p. 1026-1031, 1999.
Time Duration: 
1026-1031
Keywords: 
  • Crystal microstructure
  • Crystal orientation
  • Crystallization
  • Deposition
  • Ferroelectric materials
  • Grain size and shape
  • Morphology
  • Multilayers
  • Perovskite
  • Polycrystalline materials
  • Strontium compounds
  • Synthesis (chemical)
  • Grazing incident X ray diffraction (GIXRD) analysis
  • Dielectric films
Source: 
http://dx.doi.org/10.1557/JMR.1999.0136
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/65732
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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