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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/8468
Title: 
Effect of pH of colloidal suspension on crystallization and activation energy of deep levels in SnO2 thin films obtained via sol-gel
Author(s): 
Institution: 
Universidade Estadual Paulista (UNESP)
ISSN: 
0022-3697
Sponsorship: 
  • Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
  • Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Abstract: 
Colloidal suspensions of tin dioxide (SnO2) are prepared by the sol-gel method from suspensions with distinct pHs. The particles in solution are embedded by an electrical layer. Decreasing the pH contributes to the destruction of this layer, leading to a high degree of aggregation among particles (clusters) due to the generation of cross-linked bonds (Sn-O-Sn) between them. The aggregation affects the electrical properties of films deposited by dip-coating from these solutions, due to the higher packing produced by acid pH. The X-ray diffractograms of films indicate higher crystallinity for lower pH. The Arrhenius plot leads to activation energies of the deepest level, which was between 67 and 140 meV, for the films prepared from suspensions with pH 6-11. Lower pH films also presented higher electrical conductivity. Obtained activation energies may be related to different types of defects, which could be associated with oxygen vacancies with distinct neighborhoods, influenced by the pH and potential barriers between grains, due to distinct packing caused by cross-linked bonds. TGA/DTA results indicate an easier crystallization process for lower pH, which ends at lower temperature, in good agreement with X-ray diffraction data. (C) 2009 Elsevier Ltd. All rights reserved.
Issue Date: 
1-Sep-2009
Citation: 
Journal of Physics and Chemistry of Solids. Oxford: Pergamon-Elsevier B.V. Ltd, v. 70, n. 9, p. 1312-1316, 2009.
Time Duration: 
1312-1316
Publisher: 
Pergamon-Elsevier B.V. Ltd
Keywords: 
  • Oxides
  • Semiconductors
  • Sol-gel growth
  • Thermogravimetric analysis (TGA)
  • Electrical properties
Source: 
http://dx.doi.org/10.1016/j.jpcs.2009.07.018
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/8468
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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