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The influence of area/volume ratio on microstructure and non-Ohmic properties of SnO2-based varistor ceramic blocks
  • Universidade Estadual Paulista (UNESP)
  • CSIC
  • Univ Politecn Madrid
  • Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
  • Spanish CICYT
Sponsorship Process Number: 
Spanish CICYT: MAT2004-04843C02-01
This work deals with the electrical properties of SnO2-based varistor systems with different area-volume (A/V) ratio of the green compact. The influence of A/V ratio specially on microstructural homogeneity and different diameter-thickness (D/t) ratio of sintered compact mainly as a requisite to the existence of non-Ohmic properties is evaluated. The results evidence that, contrary of what is generally observed for ZnO-based varistor system, in the SnO2-based system, the A/V ratio of the green compacts does not influence the non-Ohmic properties, i.e. the homogeneity of the microstructure and the composition after sintering is conserved independently of the A/V ratio employed in the green compacts. Such independence was specifically observed by performing non-Ohmic measurement after cutting the sintered blocks in different slices and observing that the current-voltage curve of the slices are very similar for different A/V ratio of the green compacts before sintering. The observed behavior has its origin on the fact that A/V ratio does not affect the microstructure development during sintering due to the minimal CoO losses by vaporization for SnO2-based system, i.e. the stability of the dopant oxides is high when compared with that used in commercial ZnO center dot A Bi2O3-based varistors in which, for instance, Bi2O3 volatilizes critically. on the other hand, it was found a critical value of A/V = 5.0 cm(-1) for the ceramic blocks to effectively served as varistor, below this ratio the ceramics were highly resistive because of a high number of effective barriers 85% which is higher than normally found for ZnO-based systems (35%).
Issue Date: 
Journal of Materials Science-materials In Electronics. Dordrecht: Springer, v. 20, n. 1, p. 49-54, 2009.
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Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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