Geometry effects on the electronic properties of multi-open dots structures

Fagotto, EAM; Rossi, S. M.; Moschim, E.

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/117065

Title:

Geometry effects on the electronic properties of multi-open dots structures

Author(s):

Institution:

Universidade Estadual de Campinas (UNICAMP)
Universidade Estadual Paulista (UNESP)

ISSN:

0018-9383

Abstract:

In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises.

Issue Date:

1-Nov-1998

Citation:

Ieee Transactions On Electron Devices. New York: Ieee-inst Electrical Electronics Engineers Inc, v. 45, n. 11, p. 2361-2364, 1998.

Time Duration:

2361-2364

Publisher:

Ieee-inst Electrical Electronics Engineers Inc

Keywords:

quantum dots
quantum effect semiconductor devices
quantum wires
resonant tunneling devices

Source:

http://dx.doi.org/10.1109/16.726657

URI:

Access Rights:

Acesso restrito

Type:

outro

Source:

http://repositorio.unesp.br/handle/11449/117065

Artigos, TCCs, Teses e Dissertações da Unesp

There are no files associated with this item.

Show full item record View Statistics