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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/123457
Title: 
Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films
Author(s): 
Institution: 
  • Universidade Estadual Paulista (UNESP)
  • Universidade Federal de Itajubá (UNIFEI)
ISSN: 
1820-6131
Sponsorship: 
  • Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
  • Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
  • Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Abstract: 
Bi0.85La0.15FeO3 (BLFO) thin films were deposited on Pt(111)/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.
Issue Date: 
2011
Citation: 
Processing and Application of Ceramics, v. 5, n. 1, p. 31-39, 2011.
Time Duration: 
31-39
Keywords: 
  • Thin films
  • Oxides
  • Chemical synthesis
  • Piezoelectricity
Source: 
http://www.tf.uns.ac.rs/publikacije/PAC/tablesofcontents.html
URI: 
Access Rights: 
Acesso aberto
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/123457
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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