Study of photoinduced birefringence vs As content in thin GeAsS films

Abstract

Thin films of GeAsS glass are prepared by e-beam evaporation technique. Photoinduced birefringence (PIB) is studied as function of the As content with concentrations ranging from 10% to 40%. Raman spectroscopy is used as additional tool to explain the corresponding changes undergone by the material system. The breakdown of homopolar bonds is suggested as a possible mechanism of photo induced structural changes leading to the creation of the PIB.