Please use this identifier to cite or link to this item:
http://acervodigital.unesp.br/handle/11449/130516
- Title:
- Ferroelectric and dielectric characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method
- Universidade Estadual Paulista (UNESP)
- University of Belgrade
- Universidade Federal de São Carlos (UFSCar)
- 0255-5476
- The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75 Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 (LSCO) by the polymeric precursor method were investigated. Atomic force microscopy indicates that the deposited films exhibit a dense microstructure with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the plate-like grains of the BLT films. © 2006 Trans Tech Publications, Switzerland.
- 1-Dec-2006
- Materials Science Forum, v. 514-516, n. PART 1, p. 212-215, 2006.
- 212-215
- Trans Tech Publications Ltd
- Bismuth titanate
- Dielectric properties
- Ferroelectric properties
- Thin films
- Polymeric precursors
- Atomic force microscopy
- Bismuth compounds
- Leakage currents
- Microstructure
- Surface morphology
- Ferroelectric materials
- http://dx.doi.org/10.4028/www.scientific.net/MSF.514-516.212
- Acesso restrito
- outro
- http://repositorio.unesp.br/handle/11449/130516
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