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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/130516
Title: 
Ferroelectric and dielectric characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method
Author(s): 
Institution: 
  • Universidade Estadual Paulista (UNESP)
  • University of Belgrade
  • Universidade Federal de São Carlos (UFSCar)
ISSN: 
0255-5476
Abstract: 
The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75 Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 (LSCO) by the polymeric precursor method were investigated. Atomic force microscopy indicates that the deposited films exhibit a dense microstructure with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the plate-like grains of the BLT films. © 2006 Trans Tech Publications, Switzerland.
Issue Date: 
1-Dec-2006
Citation: 
Materials Science Forum, v. 514-516, n. PART 1, p. 212-215, 2006.
Time Duration: 
212-215
Publisher: 
Trans Tech Publications Ltd
Keywords: 
  • Bismuth titanate
  • Dielectric properties
  • Ferroelectric properties
  • Thin films
  • Polymeric precursors
  • Atomic force microscopy
  • Bismuth compounds
  • Leakage currents
  • Microstructure
  • Surface morphology
  • Ferroelectric materials
Source: 
http://dx.doi.org/10.4028/www.scientific.net/MSF.514-516.212
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/130516
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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