Silicon monosulphide radiative association

Abstract

Rate coefficients for radiative association of silicon and sulphur atoms to form silicon monosulphide (SiS) molecule are estimated. The radiative association is due mainly to approach in the E(1)Sigma(+) and A(1)Pi states of SiS. For temperatures ranging from similar to 1000 to similar to 14 000 K, the rate coefficients are found to vary from 8.43 x 10(-17) to 2.69 x 10(-16) cm(3) s(-1). Our calculated rate coefficient is higher than the values used in modelling the chemistry of Type Ia supernovae.