Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method

Marques, L. G. A.; Cavalcante, L. S.; Simoes, A. Z.; Pontes, F. M.; Santos-Junior, L. S.; Santos, M. R. M. C.; Rosa, I. L. V.; Varela, José Arana; Longo, Elson

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/25390

Title:

Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method

Author(s):

Institution:

Universidade Federal de São Carlos (UFSCar)
Universidade Federal do Piauí (UFPI)
Universidade Estadual Paulista (UNESP)

ISSN:

0254-0584

Abstract:

Ba(Zr0.25Ti0.75)O-3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 degrees C for 4h. All films crystallized in the perovskite structure present a crack-free microstructure. Dielectric properties of the BZT thin films were investigated as a function of frequency and applied voltage. The dielectric constant of the films were 36, 152 and 145 at 1 kHz, while the dielectric loss were 0.08, 0.08, and 0.12 at 1 MHz. (c) 2007 Elsevier B.V. All rights reserved.

Issue Date:

15-Oct-2007

Citation:

Materials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 105, n. 2-3, p. 293-297, 2007.

Time Duration:

293-297

Publisher:

Elsevier B.V.

Keywords:

dielectric properties
BZT
thin films
temperature dependence

Source:

http://dx.doi.org/10.1016/j.matchemphys.2007.04.065

URI:

Access Rights:

Acesso restrito

Type:

outro

Source:

http://repositorio.unesp.br/handle/11449/25390

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