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http://acervodigital.unesp.br/handle/11449/25403
- Title:
- Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method
- Universidade Estadual Paulista (UNESP)
- 0167-577X
- Ferroelectric SrBi4Ti4O15 thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. Atomic force microscopy (AFM) analyses showed that the surface of these films is smooth, dense and crack-free with low surface roughness (6.4 nm). At room temperature and at a frequency of 1 MHz, the dielectric constant and the dissipation factor were, respectively, 150 and 0.022. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behaviour. The remanent polarization and coercive field for the films deposited were 5.4 mu C/cm(2) and 8 5 kV/cm, respectively. All the capacitors showed good polarization fatigue characteristics at least up to 1 x 10(10) bipolar pulse cycles indicating that SrBi4Ti4O15 thin films can be a promising material for use in nonvolatile memories. (c) 2005 Elsevier B.V. All rights reserved.
- 1-Jul-2006
- Materials Letters. Amsterdam: Elsevier B.V., v. 60, n. 16, p. 2020-2023, 2006.
- 2020-2023
- Elsevier B.V.
- thin films
- atomic force microscopy
- dielectric properties
- fatigue
- http://dx.doi.org/10.1016/j.matlet.2005.12.071
- Acesso restrito
- outro
- http://repositorio.unesp.br/handle/11449/25403 Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp
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