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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/32493
Title: 
Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor
Author(s): 
Institution: 
  • Univ Estadual Ponta Grossa
  • Universidade Federal de São Carlos (UFSCar)
  • Universidade Estadual Paulista (UNESP)
ISSN: 
0957-4522
Abstract: 
The effect of La2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01 CoO + 0.0005 Nb2O5 + x La2O5 system, where x = 0.0005 or 0.00075, was considered in this study. The samples were sintered at 1300 degreesC for 2 and 4 h and a single SnO2 phase was identified by X-ray diffraction. Microstructure analysis by scanning electron microscopy showed that the affect of La2O3 addition is to decrease the SnO2 grain size. J versus E curves indicated that the system exhibits a varistor behavior and the effect of La2O3 is to increase both the non-linear coefficient (alpha) and the breakdown voltage (E-2). Considering the Schottky thermionic emission model the potential height and the width were estimated. The addition of small amounts of La2O3 to the basic system increases the potential barrier height and decreases both grain size and potential barrier width. (C) 2001 Kluwer Academic Publishers.
Issue Date: 
1-Jan-2001
Citation: 
Journal of Materials Science-materials In Electronics. Dordrecht: Springer, v. 12, n. 1, p. 69-74, 2001.
Time Duration: 
69-74
Publisher: 
Springer
Source: 
http://dx.doi.org/10.1023/A:1011228914690
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/32493
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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