Crystal growth of Ce-doped and undoped LiCaAlF6 by the Czochralski technique under CF4 atmosphere

Shimamura, K.; Baldochi, S. L.; Ranieri, I. M.; Sato, H.; Fujita, T.; Mazzocchi, V. L.; Parente, CBR; Paiva-Santos, C. O.; Santilli, Celso Valentim; Sarukura, N.; Fukuda, T.

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/33281

Title:

Crystal growth of Ce-doped and undoped LiCaAlF6 by the Czochralski technique under CF4 atmosphere

Author(s):

Institution:

Tohoku Univ
Universidade Estadual Paulista (UNESP)
Inst Mol Sci

ISSN:

0022-0248

Abstract:

Ce-doped and undoped LiCaAlF6 (LiCAF) single crystals 50 mm in diameter were grown by the Czochralski technique. The formation of inclusions and cracks accompanying the crystal growth was investigated. The dependence of lattice parameters on the temperature was measured for LiCAF and LiSrAlF6 single crystals. Linear thermal expansion coefficients for both these crystals were evaluated. Higher transmission properties for LiCAF single crystals were achieved in the UV and VUV wavelength regions. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Issue Date:

1-Mar-2001

Citation:

Journal of Crystal Growth. Amsterdam: Elsevier B.V., v. 223, n. 3, p. 383-388, 2001.

Time Duration:

383-388

Publisher:

Elsevier B.V.

Keywords:

growth from melt
Czochralski method
halides

Source:

http://dx.doi.org/10.1016/S0022-0248(01)00593-0

URI:

Access Rights:

Acesso restrito

Type:

outro

Source:

http://repositorio.unesp.br/handle/11449/33281

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