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http://acervodigital.unesp.br/handle/11449/34201
- Title:
- Oriented growth of Bi3.25La0.75Ti3O12 thin films on RuO2/SiO2/Si substrates by using the polymeric precursor method: Structural, microstructural and electrical properties
- Universidade Estadual Paulista (UNESP)
- Universidade Federal de São Carlos (UFSCar)
- 1385-3449
- c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on a RuO2 top electrode deposited on a (100) SiO2/Si substrate by the polymeric precursor method. X-ray diffraction and atomic force microscope investigations indicate that the films exhibit a dense, well crystallized microstructure having random orientations with a rather smooth surface morphology. The electrical properties of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on RuO2 bottom electrode leaded to a large remnant polarization (P-r ) of 17.2 mu C/cm(2) and (V-c ) of 1.8 V, fatigue free characteristics up to 10(10) switching cycles and a current density of 2.2 mu A/cm(2) at 5 V. We found that the polarization loss is insignificant with nine write/read voltages at a waiting time of 10,000 s. Independently of the applied electric field the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s.
- 1-Apr-2007
- Journal of Electroceramics. Dordrecht: Springer, v. 18, n. 1-2, p. 39-43, 2007.
- 39-43
- Springer
- thin films
- atomic force microscopy
- dielectric properties
- fatigue
- http://dx.doi.org/10.1007/s10832-007-9006-9
- Acesso restrito
- outro
- http://repositorio.unesp.br/handle/11449/34201
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