Please use this identifier to cite or link to this item:
http://acervodigital.unesp.br/handle/11449/34232
- Title:
- Microstructural and transport properties of LaNiO3-delta films grown on Si(111) by chemical solution deposition
- Universidade Federal de São Carlos (UFSCar)
- Universidade de São Paulo (USP)
- Universidade Estadual Paulista (UNESP)
- 0040-6090
- Electrically conductive LaNiO3-delta (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 degreesC. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity rho(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The rho(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.
- 24-Nov-2003
- Thin Solid Films. Lausanne: Elsevier B.V. Sa, v. 445, n. 1, p. 54-58, 2003.
- 54-58
- Elsevier B.V.
- thin films
- electrical properties
- chemical solution deposition
- atomic force microscopy (AFM)
- http://dx.doi.org/10.1016/j.tsf.2003.08.050
- Acesso restrito
- outro
- http://repositorio.unesp.br/handle/11449/34232
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