You are in the accessibility menu

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/34232
Title: 
Microstructural and transport properties of LaNiO3-delta films grown on Si(111) by chemical solution deposition
Author(s): 
Institution: 
  • Universidade Federal de São Carlos (UFSCar)
  • Universidade de São Paulo (USP)
  • Universidade Estadual Paulista (UNESP)
ISSN: 
0040-6090
Abstract: 
Electrically conductive LaNiO3-delta (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 degreesC. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity rho(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The rho(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.
Issue Date: 
24-Nov-2003
Citation: 
Thin Solid Films. Lausanne: Elsevier B.V. Sa, v. 445, n. 1, p. 54-58, 2003.
Time Duration: 
54-58
Publisher: 
Elsevier B.V.
Keywords: 
  • thin films
  • electrical properties
  • chemical solution deposition
  • atomic force microscopy (AFM)
Source: 
http://dx.doi.org/10.1016/j.tsf.2003.08.050
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/34232
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

There are no files associated with this item.
 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.