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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/34876
Title: 
Pressure field along the axis of a high-power klystron amplifier
Author(s): 
Institution: 
Universidade Estadual Paulista (UNESP)
Abstract: 
The pressure field in a high-power klystron amplifier is investigated to scale the ionic vacuum pump used to maintain the ultra high-vacuum in the device in order to increase its life-time. The investigation is conducted using an 1.3 GHz, 100 A - 240 keV high-power klystron with five reentrant coaxial cavities, assembled in a cylindrical drift tube 1.2 m long. The diffusion equation is solved to the regime molecular flow to obtain the pressure profile along the axis of the klystron drift tube. The model, solved by both analytical and numerical procedures, is able to determine the pressure values in steady-state case. This work considers the specific conductance and all important gas sources, as in the degassing of the drift tube and cavities walls, cathode, and collector. For the drift tube degassing rate equals to q(deg) = 2x10(-12) (-)mbar.L.s(-1) cm(-2) (degassing rate per unit area), to cavities q(cavity) = 3x10(-13) mbar.L.s(-1)cm(-2), to the cathode q(cathode) = 6x10(-9)_mbar.L.s(-1) and to the collector q(collector) = 6x10(-9) mbar.L.s(-1), it was found that a 10 L.s(-1) ionic vacuum pump connected in the output waveguide wall is suitable. In this case, the pressure obtained in the cathode is p(cathode) = 6.3x10(-9) mbar, in the collector p(collector) = 2.7x10(-9) mbar, and in the output waveguide p = 2.1x10(-9) mbar. Although only the steady-state case is analyzed, some aspects that may be relevant in a transient situation, for instance, when the beam hits the drift tube walls, producing a gas burst, is also commented.
Issue Date: 
1-Jan-2003
Citation: 
Ppc-2003: 14th IEEE International Pulsed Power Conference, Vols 1 and 2, Digest of Technical Papers. New York: IEEE, p. 1158-1160, 2003.
Time Duration: 
1158-1160
Publisher: 
Institute of Electrical and Electronics Engineers (IEEE)
Source: 
http://dx.doi.org/10.1109/PPC.2003.1278017
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/34876
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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