Effective aspect-ratio and gate-capacitance in circular geometry MOS transistors

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/37896

Title:

Author(s):

DeLima, J. A.

Institution:

Universidade Estadual Paulista (UNESP)

ISSN:

0038-1101

Issue Date:

1-Oct-1996

Citation:

Solid-state Electronics. Oxford: Pergamon-Elsevier B.V., v. 39, n. 10, p. 1524-1525, 1996.

Time Duration:

1524-1525

Publisher:

Elsevier B.V.

Source:

http://dx.doi.org/10.1016/0038-1101(96)00043-3

URI:

Access Rights:

Acesso restrito

Type:

outro

Source:

http://repositorio.unesp.br/handle/11449/37896

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