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Title: 

Dipole relaxation current in n-type AlxGa1-xAs

Author(s): 

• Scalvi, Luis Vicente de Andrade
• Oliveira, L.
• Li, M. S.
• Manasreh, M. O.
• vonBardeleben, H. J.
• Pomrenke, G. S.
• Lannoo, M.
• Talwar, D. N.

Institution: 

Universidade Estadual Paulista (UNESP)

ISSN: 

0272-9172

Issue Date: 

1-Jan-1994

Citation: 

Physics and Applications of Defects In Advanced Semiconductors. Pittsburgh: Materials Research Soc, v. 325, p. 285-290, 1994.

Time Duration: 

285-290

Publisher: 

Materials Research Society

URI: 

• http://hdl.handle.net/11449/38104
• http://acervodigital.unesp.br/handle/11449/38104

Access Rights: 

Acesso restrito

Type: 

outro

Source:

http://repositorio.unesp.br/handle/11449/38104

Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

 

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