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        http://acervodigital.unesp.br/handle/11449/41263- Title:
 - Structure, microstructure, ferroelectric/electromechanical properties and retention characteristics of [Bi1-x Nb (x) ]FeO3 thin films
 - Universidade Estadual do Piauí (UESPI)
 - Universidade Estadual Paulista (UNESP)
 - Universidade Federal de Itajubá (UNIFEI)
 
- 0947-8396
 - Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
 - Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
 - GERATEC
 - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
 
- FAPESP: 09/50303-4
 - CNPq: 159710/2011-1
 - GERATEC: 01.08.0506.00
 
- In this work, we report the structure, microstructure, ferroelectric/electromechanical properties, and retention characteristics of [Bi1-x Nb (x) ]FeO3 (BNFO) thin films [x=0,0.025,0.05, and 0.1] prepared by the polymeric precursor method. X-ray patterns analyses and Rietveld refinement data confirmed that BNFO thin films have a rhombohedral structure and can be obtained at 773 K for 2 h in static air. However, a small quantity of deleterious phase related to Bi2Fe4O9 was observed with the addition of niobium (Nb). Structural refinement data indicated that the substitution of bismuth (Bi) by Nb in the A-site leads to a reduction in lattice parameters and the unit cell volume. Supercell models representing the [BiO6],[NbO6], and [FeO6] clusters which are present in the rhombohedral lattice are shown here. Atomic force microscopy images showed a reduction in the average grain size of films with the substitution of Bi by Nb. Ferroelectric and electromechanical properties were confirmed by hysteresis loops and piezoresponse force microscopy. Ferroelectric/electromechanical properties and retention characteristics indicated that the BNFO films with x=0.1 have a large remnant polarization, a low coercive field, a piezoelectric coefficient (d (33)a parts per thousand 38 pm/V), and good retention resistance.
 - 1-Nov-2012
 - Applied Physics A-materials Science & Processing. New York: Springer, v. 109, n. 3, p. 703-714, 2012.
 - 703-714
 - Springer
 - http://dx.doi.org/10.1007/s00339-012-7104-2
 - Acesso restrito
 - outro
 - http://repositorio.unesp.br/handle/11449/41263
 
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