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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/64652
Title: 
HMDSO plasma polymerization and thin film optical properties
Author(s): 
Institution: 
  • Universidade Estadual Paulista (UNESP)
  • Universidade Estadual de Campinas (UNICAMP)
  • Universidade Federal de Juiz de Fora (UFJF)
ISSN: 
0040-6090
Abstract: 
Thin films were deposited from hexamethyldisiloxane (HMDSO) in a glow discharge supplied with radiofrequency (rf) power. Actino-metric optical emission spectroscopy was used to follow trends in the plasma concentrations of the species SiH (414.2 nm), CH (431.4 nm), CO (520.0 nm), and H (656.3 nm) as a function of the applied rf power (range 5 to 35 W). Transmission infrared spectroscopy (IRS) was employed to characterize the molecular structure of the polymer, showing the presence of Si-H, Si-O-Si, Si-O-C and C-H groups. The deposition rate, determined by optical interferometry, ranged from 60 to 130 nm/min. Optical properties were determined from transmission ultra violet-visible spectroscopy (UVS) data. The absorption coefficient α, the refractive index n, and the optical gap E04 of the polymer films were calculated as a function of the applied power. The refractive index at a photon energy of 1 eV varied from 1.45 to 1.55, depending on the rf power used for the deposition. The absorption coefficient showed an absorption edge similar to other non-crystalline materials, amorphous hydrogenated carbon, and semiconductors. For our samples, we define as an optical gap, the photon energy E04 corresponding to the energy at an absorption of 104 cm-1. The values of E04 decreased from 5.3 to 4.6 as the rf power was increased from 5 to 35 W. © 1995.
Issue Date: 
1-Dec-1995
Citation: 
Thin Solid Films, v. 270, n. 1-2, p. 109-113, 1995.
Time Duration: 
109-113
Keywords: 
  • Optical properties
  • Plasma processing and deposition
  • Amorphous materials
  • Carbon
  • Glow discharges
  • Hydrogenation
  • Infrared spectroscopy
  • Interferometry
  • Molecular structure
  • Polymerization
  • Refractive index
  • Semiconducting silicon compounds
  • Semiconductor plasmas
  • Actinometric optical emission spectroscopy
  • Hexamethyldisoloxane
  • Optical emission measurements
  • Optical gap
  • Optical interferometry
  • Photon energy
  • Plasma concentrations
  • Plasma processing
  • Ultraviolet visible spectroscopy
  • Thin films
Source: 
http://dx.doi.org/10.1016/0040-6090(95)06938-0
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/64652
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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