Please use this identifier to cite or link to this item:
http://acervodigital.unesp.br/handle/11449/65955- Title:
- Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology
- Universidade Estadual Paulista (UNESP)
- The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.
- 1-Dec-1999
- SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings, v. 1, p. 267-270.
- 267-270
- Front end receivers
- Gilbert cell mixers
- Low noise amplifiers
- Pseudomorphic high electron mobility transistors
- Amplifiers (electronic)
- Buffer circuits
- Computer simulation
- Electric network topology
- High electron mobility transistors
- Mixer circuits
- Monolithic microwave integrated circuits
- Semiconducting gallium arsenide
- Signal receivers
- Integrated circuit layout
- http://dx.doi.org/10.1109/IMOC.1999.867106
- Acesso restrito
- outro
- http://repositorio.unesp.br/handle/11449/65955
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.