Please use this identifier to cite or link to this item:
http://acervodigital.unesp.br/handle/11449/74430
- Title:
- Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering
- Universidade Estadual Paulista (UNESP)
- Universidade Estadual de Campinas (UNICAMP)
- 1293-2558
- The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases. © 2012 Elsevier Masson SAS. All rights reserved.
- 29-Jan-2013
- Solid State Sciences, v. 17, p. 97-101.
- 97-101
- Diluted magnetic semiconductor
- GaMnN
- Magnetic properties
- Nanocrystalline material
- Sputtering
- Amorphous silica
- Antiferromagnetics
- Brillouin functions
- Diluted magnetic semiconductors
- Ferromagnetic phasis
- Magnetic characteristic
- Magnetic contribution
- Magnetization curves
- Nanocrystalline films
- Nanocrystallines
- Qualitative analysis
- Secondary magnetic phasis
- Temperature dependent
- Antiferromagnetism
- Gallium alloys
- Magnetic semiconductors
- Manganese
- Nanocrystalline materials
- Paramagnetism
- Semiconducting gallium
- Silica
- Amorphous films
- http://dx.doi.org/10.1016/j.solidstatesciences.2012.11.020
- Acesso restrito
- outro
- http://repositorio.unesp.br/handle/11449/74430
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