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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/74430
Title: 
Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering
Author(s): 
Institution: 
  • Universidade Estadual Paulista (UNESP)
  • Universidade Estadual de Campinas (UNICAMP)
ISSN: 
1293-2558
Abstract: 
The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases. © 2012 Elsevier Masson SAS. All rights reserved.
Issue Date: 
29-Jan-2013
Citation: 
Solid State Sciences, v. 17, p. 97-101.
Time Duration: 
97-101
Keywords: 
  • Diluted magnetic semiconductor
  • GaMnN
  • Magnetic properties
  • Nanocrystalline material
  • Sputtering
  • Amorphous silica
  • Antiferromagnetics
  • Brillouin functions
  • Diluted magnetic semiconductors
  • Ferromagnetic phasis
  • Magnetic characteristic
  • Magnetic contribution
  • Magnetization curves
  • Nanocrystalline films
  • Nanocrystallines
  • Qualitative analysis
  • Secondary magnetic phasis
  • Temperature dependent
  • Antiferromagnetism
  • Gallium alloys
  • Magnetic semiconductors
  • Manganese
  • Nanocrystalline materials
  • Paramagnetism
  • Semiconducting gallium
  • Silica
  • Amorphous films
Source: 
http://dx.doi.org/10.1016/j.solidstatesciences.2012.11.020
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/74430
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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