Please use this identifier to cite or link to this item:
http://acervodigital.unesp.br/handle/11449/75949
- Title:
- CaCu3Ti4O12 thin films with non-linear resistivity deposited by RF-sputtering
- Universidade Estadual Paulista (UNESP)
- 0925-8388
- Calcium copper titanate, CaCu3Ti4O12, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (100) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The CCTO thin film present a cubic structure with lattice parameter a = 7.379 ±0.001 Å free of secondary phases. The observed electrical features of CCTO thin films are highly dependent on the [CaO12], [CaO 4], [CuO11], [CuO11Vx 0] and [TiO5.VO] clusters. The CCTO film capacitor showed a dielectric loss of 0.40 and a dielectric permittivity of 70 at 1 kHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. © 2013 Elsevier B.V. All rights reserved.
- 11-Jul-2013
- Journal of Alloys and Compounds, v. 574, p. 604-608.
- 604-608
- Chemical synthesis
- Electron microscopy
- Thin films
- X-ray diffraction
- Calcium copper titanates
- Conventional furnace
- Cubic structure
- Dielectric permittivities
- Interfacial barriers
- Polycrystalline
- Room temperature
- Secondary phasis
- Dielectric losses
- Permittivity
- Synthesis (chemical)
- X ray diffraction
- http://dx.doi.org/10.1016/j.jallcom.2013.05.216
- Acesso restrito
- outro
- http://repositorio.unesp.br/handle/11449/75949
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