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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/9414
Title: 
Effect of oxidizing atmosphere on the electrical properties of SrBi4Ti4O15 thin films obtained by the polymeric precursor method
Author(s): 
Institution: 
Universidade Estadual Paulista (UNESP)
ISSN: 
1293-2558
Sponsorship: 
  • Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
  • Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
  • Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Abstract: 
Strontium bismuth titanate (SrBi4Ti4O15) thin films were deposited on (111) Pt/Ti/SiO2/Si Substrates by spin coating from the polymeric precursor method. Annealing in static air and dynamic oxygen atmosphere was performed at 700 degrees C for 2 h. The films were characterized by X-ray diffraction, atomic force microscopy and electric properties. The dielectric properties of SrBi4Ti4O15 films were found to be remarkably sensitive to the annealing atmosphere. The C-V characteristics of the metal-ferroelectric metal structure showed a typical butterfly loop that confirms the ferroelectric properties of the film related to the domains switching. SrBi4Ti4O15 thin films annealed in oxygen atmosphere showed lower ferroelectric behavior indicating a weak ferroelectricity along c-axis direction. Published by Elsevier Masson SAS.
Issue Date: 
1-Dec-2008
Citation: 
Solid State Sciences. Amsterdam: Elsevier B.V., v. 10, n. 12, p. 1951-1957, 2008.
Time Duration: 
1951-1957
Publisher: 
Elsevier B.V.
Keywords: 
  • Thin films
  • Atomic force microscopy
  • Dielectric properties
Source: 
http://dx.doi.org/10.1016/j.solidstatesciences.2008.03.027
URI: 
Access Rights: 
Acesso restrito
Type: 
outro
Source:
http://repositorio.unesp.br/handle/11449/9414
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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