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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/10087
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dc.contributor.authorBehera, B.-
dc.contributor.authorAraujo, E. B.-
dc.contributor.authorJunior, A. F.-
dc.date.accessioned2014-05-20T13:29:48Z-
dc.date.accessioned2016-10-25T16:49:03Z-
dc.date.available2014-05-20T13:29:48Z-
dc.date.available2016-10-25T16:49:03Z-
dc.date.issued2010-01-01-
dc.identifierhttp://dx.doi.org/10.1179/174367509X12447975734195-
dc.identifier.citationAdvances In Applied Ceramics. Leeds: Maney Publishing, v. 109, n. 1, p. 1-5, 2010.-
dc.identifier.issn1743-6753-
dc.identifier.urihttp://hdl.handle.net/11449/10087-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/10087-
dc.description.abstractSr0.5Ba0.5Bi2Nb2O9 ceramic was prepared by a conventional solid state reaction method and studied using X-ray powder diffraction and dielectric measurements. At room temperature, an orthorhombic structure was confirmed and their parameters were obtained using the Rietveld method. Dielectric properties were studied in a broad range of temperatures and frequencies. Typical relaxor behaviour was observed with strong dispersion of the complex relative dielectric permittivity. The temperature of the maximum dielectric constant T-m decreases with increasing frequency, and shifts towards higher temperature side. The activation energy E-a approximate to 0.194 +/- 0.003 eV and freezing temperature T-f approximate to 371 +/- 2 K values were found using the Vogel-Fulcher relationship. Conduction process in the material may be due to the hopping of charge carriers at low temperatures and small polarons and/or singly ionised oxygen vacancies at higher temperatures.en
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
dc.format.extent1-5-
dc.language.isoeng-
dc.publisherManey Publishing-
dc.sourceWeb of Science-
dc.subjectBismuth layereden
dc.subjectAurivilliusen
dc.subjectRelaxoren
dc.titleStructural and dielectric properties of relaxor Sr0.5Ba0.5Bi2Nb2O9 ceramicen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade Federal de Goiás (UFG)-
dc.description.affiliationUniv Estadual Paulista, Dept Fis & Quim, BR-15385000 Ilha Solteira, SP, Brazil-
dc.description.affiliationUniversidade Federal de Goiás (UFG), Inst Fis, BR-74001970 Goiania, Go, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Dept Fis & Quim, BR-15385000 Ilha Solteira, SP, Brazil-
dc.description.sponsorshipIdFAPESP: 07/00183-7-
dc.description.sponsorshipIdFAPESP: 07/05302-4-
dc.description.sponsorshipIdCNPq: 301382/2006-9-
dc.identifier.doi10.1179/174367509X12447975734195-
dc.identifier.wosWOS:000275304400001-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofAdvances In Applied Ceramics-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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