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http://acervodigital.unesp.br/handle/11449/10087
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DC Field | Value | Language |
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dc.contributor.author | Behera, B. | - |
dc.contributor.author | Araujo, E. B. | - |
dc.contributor.author | Junior, A. F. | - |
dc.date.accessioned | 2014-05-20T13:29:48Z | - |
dc.date.accessioned | 2016-10-25T16:49:03Z | - |
dc.date.available | 2014-05-20T13:29:48Z | - |
dc.date.available | 2016-10-25T16:49:03Z | - |
dc.date.issued | 2010-01-01 | - |
dc.identifier | http://dx.doi.org/10.1179/174367509X12447975734195 | - |
dc.identifier.citation | Advances In Applied Ceramics. Leeds: Maney Publishing, v. 109, n. 1, p. 1-5, 2010. | - |
dc.identifier.issn | 1743-6753 | - |
dc.identifier.uri | http://hdl.handle.net/11449/10087 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/10087 | - |
dc.description.abstract | Sr0.5Ba0.5Bi2Nb2O9 ceramic was prepared by a conventional solid state reaction method and studied using X-ray powder diffraction and dielectric measurements. At room temperature, an orthorhombic structure was confirmed and their parameters were obtained using the Rietveld method. Dielectric properties were studied in a broad range of temperatures and frequencies. Typical relaxor behaviour was observed with strong dispersion of the complex relative dielectric permittivity. The temperature of the maximum dielectric constant T-m decreases with increasing frequency, and shifts towards higher temperature side. The activation energy E-a approximate to 0.194 +/- 0.003 eV and freezing temperature T-f approximate to 371 +/- 2 K values were found using the Vogel-Fulcher relationship. Conduction process in the material may be due to the hopping of charge carriers at low temperatures and small polarons and/or singly ionised oxygen vacancies at higher temperatures. | en |
dc.description.sponsorship | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | - |
dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | - |
dc.description.sponsorship | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | - |
dc.format.extent | 1-5 | - |
dc.language.iso | eng | - |
dc.publisher | Maney Publishing | - |
dc.source | Web of Science | - |
dc.subject | Bismuth layered | en |
dc.subject | Aurivillius | en |
dc.subject | Relaxor | en |
dc.title | Structural and dielectric properties of relaxor Sr0.5Ba0.5Bi2Nb2O9 ceramic | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.contributor.institution | Universidade Federal de Goiás (UFG) | - |
dc.description.affiliation | Univ Estadual Paulista, Dept Fis & Quim, BR-15385000 Ilha Solteira, SP, Brazil | - |
dc.description.affiliation | Universidade Federal de Goiás (UFG), Inst Fis, BR-74001970 Goiania, Go, Brazil | - |
dc.description.affiliationUnesp | Univ Estadual Paulista, Dept Fis & Quim, BR-15385000 Ilha Solteira, SP, Brazil | - |
dc.description.sponsorshipId | FAPESP: 07/00183-7 | - |
dc.description.sponsorshipId | FAPESP: 07/05302-4 | - |
dc.description.sponsorshipId | CNPq: 301382/2006-9 | - |
dc.identifier.doi | 10.1179/174367509X12447975734195 | - |
dc.identifier.wos | WOS:000275304400001 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Advances In Applied Ceramics | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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