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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/116285
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dc.contributor.authorGozzi, G.-
dc.contributor.authorCagnani, L. D.-
dc.contributor.authorFaria, R. M.-
dc.contributor.authorSantos, L. F.-
dc.date.accessioned2015-03-18T15:53:00Z-
dc.date.accessioned2016-10-25T20:24:26Z-
dc.date.available2015-03-18T15:53:00Z-
dc.date.available2016-10-25T20:24:26Z-
dc.date.issued2014-11-01-
dc.identifierhttp://dx.doi.org/10.1007/s10008-014-2547-3-
dc.identifier.citationJournal Of Solid State Electrochemistry. New York: Springer, v. 18, n. 11, p. 3181-3190, 2014.-
dc.identifier.issn1432-8488-
dc.identifier.urihttp://hdl.handle.net/11449/116285-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/116285-
dc.description.abstractA phenomenological model has been developed to account for the results of impedance/admittance spectroscopy measurements from light-emitting electrochemical cells (LECs) comprising a polymer electrolyte and two different conjugated polymers used as organic semiconductor. The application of a d.c. offset bias superimposed to the a.c. modulation voltage was used to observe the transition from the behavior prior to device operation and after the formation of the electrochemical p-i-n junction. The analysis of the whole device "conductivity" as a function of the applied bias and of the frequency was used to support the assumptions considered to develop the model. The results show that the device, after the p-i-n junction formation, can be considered as composed by two highly conductive electrochemically doped (n and p) regions and a thin (few tens nanometers), insulating layer, where the electrical current is dominated by electronic charge carrier injection via tunneling through a rectangular energy barrier. Before the p-i-n junction formation, there is no doping of semiconductor material, and the device electrical properties are dominated by the intrinsic electronic charge carriers in the organic semiconductor. Results from devices made of organic semiconductors with different band gap energy and different layer thicknesses are used to corroborate the proposed model.en
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
dc.description.sponsorshipNational Institute of Organic Electronics (INEO)-
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
dc.format.extent3181-3190-
dc.language.isoeng-
dc.publisherSpringer-
dc.sourceWeb of Science-
dc.subjectLight-emitting electrochemical cellsen
dc.subjectImpedance/admittance spectroscopyen
dc.subjectOrganic electronicsen
dc.titlePhenomenological model for the interpretation of impedance/admittance spectroscopy results in polymer light-emitting electrochemical cellsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade de São Paulo (USP)-
dc.description.affiliationUniv Estadual Paulista UNESP, Dept Fis, BR-13506900 Rio Claro, Brazil-
dc.description.affiliationUniv Sao Paulo, Inst Fis Sao Carlos, BR-13560250 Sao Paulo, Brazil-
dc.description.affiliationUniv Estadual Paulista UNESP, Dept Fis, BR-15054000 Sao Jose Do Rio Preto, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista UNESP, Dept Fis, BR-13506900 Rio Claro, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista UNESP, Dept Fis, BR-15054000 Sao Jose Do Rio Preto, Brazil-
dc.identifier.doi10.1007/s10008-014-2547-3-
dc.identifier.wosWOS:000344332400028-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal Of Solid State Electrochemistry-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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