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dc.contributor.authorCano de Andrade, Maria Gloria-
dc.contributor.authorMartino, Joao Antonio-
dc.contributor.authorAoulaiche, Marc-
dc.contributor.authorCollaert, Nadine-
dc.contributor.authorSimoen, Eddy-
dc.contributor.authorClaeys, Cor-
dc.date.accessioned2015-03-18T15:53:41Z-
dc.date.accessioned2016-10-25T20:25:20Z-
dc.date.available2015-03-18T15:53:41Z-
dc.date.available2016-10-25T20:25:20Z-
dc.date.issued2014-11-01-
dc.identifierhttp://dx.doi.org/10.1016/j.microrel.2014.06.013-
dc.identifier.citationMicroelectronics Reliability. Oxford: Pergamon-elsevier Science Ltd, v. 54, n. 11, p. 2349-2354, 2014.-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/11449/116667-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/116667-
dc.description.abstractIn this paper, the influence of proton irradiation is experimentally studied in triple-gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance, Drain Induced Barrier Lowering (DIBL) and the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance and intrinsic voltage gain will be compared. Furthermore, the Low-Frequency (LF) noise will be also analyzed in the DT mode and the standard biasing configuration. The results indicate that the better electrical characteristics and analog performance of DTMOS FinFETs make them very competitive candidates for low-noise RF analog applications in a radiation environment. (C) 2014 Elsevier Ltd. All rights reserved.en
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
dc.description.sponsorshipESA-
dc.format.extent2349-2354-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.sourceWeb of Science-
dc.subjectDTMOS FinFETsen
dc.subjectProton irradiationen
dc.subjectAnalog performanceen
dc.subjectLow-frequency noiseen
dc.subjectFlicker noiseen
dc.subjectGeneration-recombination noiseen
dc.titleInvestigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiationen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade de São Paulo (USP)-
dc.contributor.institutionIMEC-
dc.contributor.institutionKatholieke Univ Leuven-
dc.description.affiliationUniv Estadual Paulista, UNESP, BR-18087180 Sorocaba, Brazil-
dc.description.affiliationUniv Sao Paulo, LSI PSI USP, BR-05508010 Sao Paulo, Brazil-
dc.description.affiliationIMEC, B-3001 Louvain, Belgium-
dc.description.affiliationKatholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium-
dc.description.affiliationUnespUniv Estadual Paulista, UNESP, BR-18087180 Sorocaba, Brazil-
dc.description.sponsorshipIdESA22485/09/NL/PA-
dc.identifier.doi10.1016/j.microrel.2014.06.013-
dc.identifier.wosWOS:000346212900001-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofMicroelectronics Reliability-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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