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http://acervodigital.unesp.br/handle/11449/116667
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DC Field | Value | Language |
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dc.contributor.author | Cano de Andrade, Maria Gloria | - |
dc.contributor.author | Martino, Joao Antonio | - |
dc.contributor.author | Aoulaiche, Marc | - |
dc.contributor.author | Collaert, Nadine | - |
dc.contributor.author | Simoen, Eddy | - |
dc.contributor.author | Claeys, Cor | - |
dc.date.accessioned | 2015-03-18T15:53:41Z | - |
dc.date.accessioned | 2016-10-25T20:25:20Z | - |
dc.date.available | 2015-03-18T15:53:41Z | - |
dc.date.available | 2016-10-25T20:25:20Z | - |
dc.date.issued | 2014-11-01 | - |
dc.identifier | http://dx.doi.org/10.1016/j.microrel.2014.06.013 | - |
dc.identifier.citation | Microelectronics Reliability. Oxford: Pergamon-elsevier Science Ltd, v. 54, n. 11, p. 2349-2354, 2014. | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | http://hdl.handle.net/11449/116667 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/116667 | - |
dc.description.abstract | In this paper, the influence of proton irradiation is experimentally studied in triple-gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance, Drain Induced Barrier Lowering (DIBL) and the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance and intrinsic voltage gain will be compared. Furthermore, the Low-Frequency (LF) noise will be also analyzed in the DT mode and the standard biasing configuration. The results indicate that the better electrical characteristics and analog performance of DTMOS FinFETs make them very competitive candidates for low-noise RF analog applications in a radiation environment. (C) 2014 Elsevier Ltd. All rights reserved. | en |
dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | - |
dc.description.sponsorship | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | - |
dc.description.sponsorship | ESA | - |
dc.format.extent | 2349-2354 | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.source | Web of Science | - |
dc.subject | DTMOS FinFETs | en |
dc.subject | Proton irradiation | en |
dc.subject | Analog performance | en |
dc.subject | Low-frequency noise | en |
dc.subject | Flicker noise | en |
dc.subject | Generation-recombination noise | en |
dc.title | Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.contributor.institution | Universidade de São Paulo (USP) | - |
dc.contributor.institution | IMEC | - |
dc.contributor.institution | Katholieke Univ Leuven | - |
dc.description.affiliation | Univ Estadual Paulista, UNESP, BR-18087180 Sorocaba, Brazil | - |
dc.description.affiliation | Univ Sao Paulo, LSI PSI USP, BR-05508010 Sao Paulo, Brazil | - |
dc.description.affiliation | IMEC, B-3001 Louvain, Belgium | - |
dc.description.affiliation | Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium | - |
dc.description.affiliationUnesp | Univ Estadual Paulista, UNESP, BR-18087180 Sorocaba, Brazil | - |
dc.description.sponsorshipId | ESA22485/09/NL/PA | - |
dc.identifier.doi | 10.1016/j.microrel.2014.06.013 | - |
dc.identifier.wos | WOS:000346212900001 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Microelectronics Reliability | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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