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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/130546
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dc.contributor.authorDegani, Marcos H.-
dc.contributor.authorScalvi, Luis V.A.-
dc.date.accessioned2014-05-27T11:17:53Z-
dc.date.accessioned2016-10-25T21:21:25Z-
dc.date.available2014-05-27T11:17:53Z-
dc.date.available2016-10-25T21:21:25Z-
dc.date.issued1993-05-01-
dc.identifierhttp://dx.doi.org/10.1016/0038-1098(93)90377-Y-
dc.identifier.citationSolid State Communications, v. 86, n. 5, p. 301-304, 1993.-
dc.identifier.issn0038-1098-
dc.identifier.urihttp://hdl.handle.net/11449/130546-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/130546-
dc.description.abstractA new double channel field-effect structure based on delta-doping technology is proposed Resonant tunneling between the channels is employed to control the transport along the interface plane. A realistic simulation is performed for several temperatures. We solve the Schrodinger and Poisson equations self-consistently and have found that a large peak-to-valley ratio in the current-voltage characteristic occurs at the whole range of temperature investigated this effect indicates the potential application of this phenomenon for switching devices, where the transversal conductivity can be controlled due to the coupling between states belonging to different channels.en
dc.format.extent301-304-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.sourceScopus-
dc.subjectDoping (additives)-
dc.subjectNegative resistance-
dc.subjectSwitching circuits-
dc.subjectDouble channel field-effect structures-
dc.subjectResonant tunneling-
dc.subjectSubband mixing-
dc.subjectField effect semiconductor devices-
dc.titleSubband mixing inducing negative resistanceen
dc.typeoutro-
dc.contributor.institutionUniversidade de São Paulo (USP)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationDepartamento de Física -UNESP, Bauru, C.P. 473, 17033 Bauru, SP-
dc.description.affiliationUnespDepartamento de Física -UNESP, Bauru, C.P. 473, 17033 Bauru, SP-
dc.identifier.doi10.1016/0038-1098(93)90377-Y-
dc.identifier.wosWOS:A1993LA65800007-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofSolid State Communications-
dc.identifier.scopus2-s2.0-0027593913-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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