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DC Field | Value | Language |
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dc.contributor.author | Boratto, Miguel Henrique | - |
dc.contributor.author | Scalvi, Luis Vicente de Andrade | - |
dc.contributor.author | Machado, Diego Henrique O. | - |
dc.date.accessioned | 2016-03-02T13:03:32Z | - |
dc.date.accessioned | 2016-10-25T21:33:04Z | - |
dc.date.available | 2016-03-02T13:03:32Z | - |
dc.date.available | 2016-10-25T21:33:04Z | - |
dc.date.issued | 2014 | - |
dc.identifier | http://dx.doi.org/10.4028/www.scientific.net/AMR.975.248 | - |
dc.identifier.citation | Advanced Materials Research, v. 975, p. 248-253, 2014. | - |
dc.identifier.issn | 1662-8985 | - |
dc.identifier.uri | http://hdl.handle.net/11449/135610 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/135610 | - |
dc.description.abstract | Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown. | en |
dc.format.extent | 248-253 | - |
dc.language.iso | eng | - |
dc.source | Currículo Lattes | - |
dc.subject | Alumina | en |
dc.subject | Oxidation | en |
dc.subject | Resistive evaporation | en |
dc.subject | Thermal annealing | en |
dc.title | Al2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistor | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.description.affiliation | Universidade Estadual Paulista Júlio de Mesquita Filho, Departamento de Física, Faculdade de Ciências de Bauru, Bauru, Av. Luiz Edmundo Carrijo Coube 14-01, Vargem Limpa, CEP 17033360, SP, Brasil | - |
dc.description.affiliationUnesp | Universidade Estadual Paulista Júlio de Mesquita Filho, Departamento de Física, Faculdade de Ciências de Bauru, Bauru, Av. Luiz Edmundo Carrijo Coube 14-01, Vargem Limpa, CEP 17033360, SP, Brasil | - |
dc.identifier.doi | 10.4028/www.scientific.net/AMR.975.248 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Advanced Materials Research | - |
dc.identifier.lattes | 7730719476451232 | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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