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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/135610
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dc.contributor.authorBoratto, Miguel Henrique-
dc.contributor.authorScalvi, Luis Vicente de Andrade-
dc.contributor.authorMachado, Diego Henrique O.-
dc.date.accessioned2016-03-02T13:03:32Z-
dc.date.accessioned2016-10-25T21:33:04Z-
dc.date.available2016-03-02T13:03:32Z-
dc.date.available2016-10-25T21:33:04Z-
dc.date.issued2014-
dc.identifierhttp://dx.doi.org/10.4028/www.scientific.net/AMR.975.248-
dc.identifier.citationAdvanced Materials Research, v. 975, p. 248-253, 2014.-
dc.identifier.issn1662-8985-
dc.identifier.urihttp://hdl.handle.net/11449/135610-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/135610-
dc.description.abstractAlumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.en
dc.format.extent248-253-
dc.language.isoeng-
dc.sourceCurrículo Lattes-
dc.subjectAluminaen
dc.subjectOxidationen
dc.subjectResistive evaporationen
dc.subjectThermal annealingen
dc.titleAl2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistoren
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniversidade Estadual Paulista Júlio de Mesquita Filho, Departamento de Física, Faculdade de Ciências de Bauru, Bauru, Av. Luiz Edmundo Carrijo Coube 14-01, Vargem Limpa, CEP 17033360, SP, Brasil-
dc.description.affiliationUnespUniversidade Estadual Paulista Júlio de Mesquita Filho, Departamento de Física, Faculdade de Ciências de Bauru, Bauru, Av. Luiz Edmundo Carrijo Coube 14-01, Vargem Limpa, CEP 17033360, SP, Brasil-
dc.identifier.doi10.4028/www.scientific.net/AMR.975.248-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofAdvanced Materials Research-
dc.identifier.lattes7730719476451232-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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