You are in the accessibility menu

Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/23396
Full metadata record
DC FieldValueLanguage
dc.contributor.authorGusso, A.-
dc.contributor.authorMa, D. G.-
dc.contributor.authorHummelgen, I. A.-
dc.contributor.authorda Luz, MGE-
dc.date.accessioned2014-05-20T14:06:39Z-
dc.date.available2014-05-20T14:06:39Z-
dc.date.issued2004-02-15-
dc.identifierhttp://dx.doi.org/10.1063/1.1640457-
dc.identifier.citationJournal of Applied Physics. Melville: Amer Inst Physics, v. 95, n. 4, p. 2056-2062, 2004.-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/11449/23396-
dc.description.abstractWe model the electrical behavior of organic light-emitting diodes whose emissive multilayer is formed by blends of an electron transporting material, tris-(8-hydroxyquinoline) aluminum (Alq(3)) and a hole transporting material, N,N-'-diphenyl-N,N-'-bis(1,1(')-biphenyl)-4,4-diamine. The multilayer is composed of layers of different concentration. The Alq(3) concentration gradually decreases from the cathode to the anode. We demonstrate that these graded devices have higher efficiency and operate at lower applied voltages than devices whose emissive layer is made of nominally homogeneous blends. Our results show an important advantage of graded devices, namely, the low values of the recombination rate distribution near the cathode and the anode, so that electrode quenching is expected to be significantly suppressed in these devices. (C) 2004 American Institute of Physics.en
dc.format.extent2056-2062-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics (AIP)-
dc.sourceWeb of Science-
dc.titleModeling of organic light-emitting diodes with graded concentration in the emissive multilayeren
dc.typeoutro-
dc.contributor.institutionUniversidade Federal do Paraná (UFPR)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionChinese Acad Sci-
dc.description.affiliationUniversidade Federal do Paraná (UFPF), Dept Fis, BR-81531990 Curitiba, Parana, Brazil-
dc.description.affiliationUNESP, IFT, BR-01405990 São Paulo, Brazil-
dc.description.affiliationChinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China-
dc.description.affiliationUnespUNESP, IFT, BR-01405990 São Paulo, Brazil-
dc.identifier.doi10.1063/1.1640457-
dc.identifier.wosWOS:000188654100068-
dc.rights.accessRightsAcesso restrito-
dc.identifier.fileWOS000188654100068.pdf-
dc.relation.ispartofJournal of Applied Physics-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

There are no files associated with this item.
 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.