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DC Field | Value | Language |
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dc.contributor.author | Gusso, A. | - |
dc.contributor.author | Ma, D. G. | - |
dc.contributor.author | Hummelgen, I. A. | - |
dc.contributor.author | da Luz, MGE | - |
dc.date.accessioned | 2014-05-20T14:06:39Z | - |
dc.date.available | 2014-05-20T14:06:39Z | - |
dc.date.issued | 2004-02-15 | - |
dc.identifier | http://dx.doi.org/10.1063/1.1640457 | - |
dc.identifier.citation | Journal of Applied Physics. Melville: Amer Inst Physics, v. 95, n. 4, p. 2056-2062, 2004. | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/11449/23396 | - |
dc.description.abstract | We model the electrical behavior of organic light-emitting diodes whose emissive multilayer is formed by blends of an electron transporting material, tris-(8-hydroxyquinoline) aluminum (Alq(3)) and a hole transporting material, N,N-'-diphenyl-N,N-'-bis(1,1(')-biphenyl)-4,4-diamine. The multilayer is composed of layers of different concentration. The Alq(3) concentration gradually decreases from the cathode to the anode. We demonstrate that these graded devices have higher efficiency and operate at lower applied voltages than devices whose emissive layer is made of nominally homogeneous blends. Our results show an important advantage of graded devices, namely, the low values of the recombination rate distribution near the cathode and the anode, so that electrode quenching is expected to be significantly suppressed in these devices. (C) 2004 American Institute of Physics. | en |
dc.format.extent | 2056-2062 | - |
dc.language.iso | eng | - |
dc.publisher | American Institute of Physics (AIP) | - |
dc.source | Web of Science | - |
dc.title | Modeling of organic light-emitting diodes with graded concentration in the emissive multilayer | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Federal do Paraná (UFPR) | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.contributor.institution | Chinese Acad Sci | - |
dc.description.affiliation | Universidade Federal do Paraná (UFPF), Dept Fis, BR-81531990 Curitiba, Parana, Brazil | - |
dc.description.affiliation | UNESP, IFT, BR-01405990 São Paulo, Brazil | - |
dc.description.affiliation | Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China | - |
dc.description.affiliationUnesp | UNESP, IFT, BR-01405990 São Paulo, Brazil | - |
dc.identifier.doi | 10.1063/1.1640457 | - |
dc.identifier.wos | WOS:000188654100068 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.identifier.file | WOS000188654100068.pdf | - |
dc.relation.ispartof | Journal of Applied Physics | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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