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dc.contributor.authorSeridonio, A. C.-
dc.contributor.authorYoshida, M.-
dc.contributor.authorOliveira, L. N.-
dc.date.accessioned2013-09-30T18:50:59Z-
dc.date.accessioned2014-05-20T14:16:41Z-
dc.date.accessioned2016-10-25T17:39:37Z-
dc.date.available2013-09-30T18:50:59Z-
dc.date.available2014-05-20T14:16:41Z-
dc.date.available2016-10-25T17:39:37Z-
dc.date.issued2009-12-01-
dc.identifierhttp://dx.doi.org/10.1103/PhysRevB.80.235318-
dc.identifier.citationPhysical Review B. College Pk: Amer Physical Soc, v. 80, n. 23, p. 13, 2009.-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/11449/25020-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/25020-
dc.description.abstractA numerical renormalization-group study of the conductance through a quantum wire containing noninteracting electrons side-coupled to a quantum dot is reported. The temperature and the dot-energy dependence of the conductance are examined in the light of a recently derived linear mapping between the temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model of a quantum wire with an embedded quantum dot. Two conduction paths, one traversing the wire, the other a bypass through the quantum dot, are identified. A gate potential applied to the quantum wire is shown to control the current through the bypass. When the potential favors transport through the wire, the conductance in the Kondo regime rises from nearly zero at low temperatures to nearly ballistic at high temperatures. When it favors the dot, the pattern is reversed: the conductance decays from nearly ballistic to nearly zero. When comparable currents flow through the two channels, the conductance is nearly temperature independent in the Kondo regime, and Fano antiresonances in the fixed-temperature plots of the conductance as a function of the dot-energy signal interference between them. Throughout the Kondo regime and, at low temperatures, even in the mixed-valence regime, the numerical data are in excellent agreement with the universal mapping.en
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
dc.format.extent13-
dc.language.isoeng-
dc.publisherAmer Physical Soc-
dc.sourceWeb of Science-
dc.subjectAnderson modelen
dc.subjectballistic transporten
dc.subjectelectric admittanceen
dc.subjectelectrical conductivity transitionsen
dc.subjectKondo effecten
dc.subjectmixed conductivityen
dc.subjectmixed valence compoundsen
dc.subjectquantum dotsen
dc.subjectquantum wiresen
dc.subjectrenormalisationen
dc.titleUniversal zero-bias conductance through a quantum wire side-coupled to a quantum doten
dc.typeoutro-
dc.contributor.institutionUniversidade de São Paulo (USP)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniv São Paulo, Inst Fis Sao Carlos, Dept Fis & Informat, BR-369 Sao Carlos, SP, Brazil-
dc.description.affiliationUniv Estadual Paulista, Inst Geociencias & Ciencias Exatas, Dept Fis, BR-13500 Rio Claro, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Inst Geociencias & Ciencias Exatas, Dept Fis, BR-13500 Rio Claro, SP, Brazil-
dc.identifier.doi10.1103/PhysRevB.80.235318-
dc.identifier.wosWOS:000273228800079-
dc.rights.accessRightsAcesso restrito-
dc.identifier.fileWOS000273228800079.pdf-
dc.relation.ispartofPhysical Review B-
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