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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/25411
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dc.contributor.authorSimoes, A. Z.-
dc.contributor.authorGonzalez, A. H.-
dc.contributor.authorZaghete, M. A.-
dc.contributor.authorStojanovic, B. D.-
dc.contributor.authorCavalheiro, A. A.-
dc.contributor.authorMoeckli, P.-
dc.contributor.authorSetter, N.-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T14:18:00Z-
dc.date.accessioned2016-10-25T17:40:17Z-
dc.date.available2014-05-20T14:18:00Z-
dc.date.available2016-10-25T17:40:17Z-
dc.date.issued2002-01-01-
dc.identifierhttp://dx.doi.org/10.1080/713716163-
dc.identifier.citationFerroelectrics. Abingdon: Taylor & Francis Ltd, v. 271, p. 1623-1628, 2002.-
dc.identifier.issn0015-0193-
dc.identifier.urihttp://hdl.handle.net/11449/25411-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/25411-
dc.description.abstractPolymeric precursor solution (Pechini method) was used to deposit LiNbO3 thin films by spin-coating on (100) silicon substrates. X-ray diffraction data of thin films showed that the increase of oxygen flow promotes a preferred orientation of (001) LiNbO3 planes parallel to the substrate surface. Surface roughness and grain size, observed by atomic force microscopy, change also with oxygen flow.en
dc.format.extent1623-1628-
dc.language.isoeng-
dc.publisherTaylor & Francis Ltd-
dc.sourceWeb of Science-
dc.subjectcrystallizationpt
dc.subjectLiNbO3pt
dc.subjectrietveld analysispt
dc.titleInfluence of oxygen flow on crystallization and morphology of LiNbO3 thin filmsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionSwiss Fed Inst Technol-
dc.description.affiliationUNESP, Inst Chem, Dept Chem Phys, BR-14801970 Araraquara, SP, Brazil-
dc.description.affiliationSwiss Fed Inst Technol, CH-1015 Lausanne, Switzerland-
dc.description.affiliationUnespUNESP, Inst Chem, Dept Chem Phys, BR-14801970 Araraquara, SP, Brazil-
dc.identifier.doi10.1080/713716163-
dc.identifier.wosWOS:000177216700007-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofFerroelectrics-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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