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dc.contributor.authorSimões, Alexandre Zirpoli-
dc.contributor.authorRiccardi, C. S.-
dc.contributor.authorDos Santos, M. L.-
dc.contributor.authorGarcia, F. Gonzalez-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T14:18:28Z-
dc.date.accessioned2016-10-25T17:40:32Z-
dc.date.available2014-05-20T14:18:28Z-
dc.date.available2016-10-25T17:40:32Z-
dc.date.issued2009-08-05-
dc.identifierhttp://dx.doi.org/10.1016/j.materresbull.2009.03.011-
dc.identifier.citationMaterials Research Bulletin. Oxford: Pergamon-Elsevier B.V. Ltd, v. 44, n. 8, p. 1747-1752, 2009.-
dc.identifier.issn0025-5408-
dc.identifier.urihttp://hdl.handle.net/11449/25561-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/25561-
dc.description.abstractBismuth ferrite thin films were deposited on Pt/Ti/SiO(2)/Si substrates by a soft chemical method and spin-coating technique. The effect of annealing atmosphere (air, N(2) and O(2)) on the structure and electrical properties of the films are reported. X-ray diffraction analysis reveals that the film annealed in air atmosphere is a single-phase perovskite structure. The films annealed in air showed better crystallinity and the presence of a single BFO phase leading to lower leakage current density and superior ferroelectric hysteresis loops at room temperature. In this way, we reveal that BFO film crystallized in air atmosphere by the soft chemical method can be useful for practical applications, including nonvolatile digital memories, spintronics and data-storage media. (C) 2009 Elsevier Ltd. All rights reserved.en
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
dc.format.extent1747-1752-
dc.language.isoeng-
dc.publisherPergamon-Elsevier B.V. Ltd-
dc.sourceWeb of Science-
dc.subjectThin filmsen
dc.subjectChemical synthesisen
dc.subjectAtomic force microscopyen
dc.subjectFerroelectricityen
dc.titleEffect of annealing atmosphere on phase formation and electrical characteristics of bismuth ferrite thin filmsen
dc.typeoutro-
dc.contributor.institutionUniversidade Federal de Itajubá (UNIFEI)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniversidade Federal de Itajubá (UNIFEI), BR-35900373 Itabira, MG, Brazil-
dc.description.affiliationUniv Estadual Paulista, Inst Quim, Dept Quim Fis, Lab Interdisciplinar Ceram, BR-14800900 Araraquara, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, Dept Quim Fis, Lab Interdisciplinar Ceram, BR-14800900 Araraquara, SP, Brazil-
dc.identifier.doi10.1016/j.materresbull.2009.03.011-
dc.identifier.wosWOS:000267725300026-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofMaterials Research Bulletin-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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