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dc.contributor.authorTararam, R.-
dc.contributor.authorJoanni, E.-
dc.contributor.authorSavu, R.-
dc.contributor.authorBueno, Paulo Roberto-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T14:18:31Z-
dc.date.accessioned2016-10-25T17:40:35Z-
dc.date.available2014-05-20T14:18:31Z-
dc.date.available2016-10-25T17:40:35Z-
dc.date.issued2011-02-01-
dc.identifierhttp://dx.doi.org/10.1021/am101079g-
dc.identifier.citationAcs Applied Materials & Interfaces. Washington: Amer Chemical Soc, v. 3, n. 2, p. 500-504, 2011.-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/11449/25581-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/25581-
dc.description.abstractHighly aligned CaCu3Ti4O12 nanorod arrays were grown on Si/SiO2/Ti/Pt substrates by radio-frequency sputtering at a low deposition temperature of 300 degrees C and room temperature. Structural and morphological studies have shown that the nanostructures have a polycrystalline nature and are oriented perpendicular to the substrate. The high density of grain boundaries in the nanorods is responsible for the nonlinear current behavior observed in these arrays. The current-voltage (I-V) characteristics observed in nanorods were attributed to the resistive memory phenomenon. The electrical resistance of microcapacitors composed of CaCu3Ti4O12 nanorods could be reversibly switched between two stable resistance states by varying the applied electric field. In order to explain this switching mechanism, a model based on the increase/decrease of electrical conduction controlled by grain boundary polarization has been proposed.en
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
dc.format.extent500-504-
dc.language.isoeng-
dc.publisherAmer Chemical Soc-
dc.sourceWeb of Science-
dc.subjectCCTOen
dc.subjectnanorodsen
dc.subjectdielectricen
dc.subjectnonlinear I-Ven
dc.subjectresistive switchingen
dc.subjectRF sputteringen
dc.titleResistive-Switching Behavior in Polycrystalline CaCu3Ti4O12 Nanorodsen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionCtr Tecnol Informação Renato Archer CTI-
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)-
dc.description.affiliationUniv Estadual Paulista, Inst Quim Araraquara, Dept Quim Fis, BR-14800900 São Paulo, Brazil-
dc.description.affiliationCtr Tecnol Informação Renato Archer CTI, BR-13069901 São Paulo, Brazil-
dc.description.affiliationUniv Estadual Campinas, CCS, BR-13083970 Campinas, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim Araraquara, Dept Quim Fis, BR-14800900 São Paulo, Brazil-
dc.description.sponsorshipIdFAPESP: 06/61758-4-
dc.identifier.doi10.1021/am101079g-
dc.identifier.wosWOS:000287639400054-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofAcs Applied Materials & Interfaces-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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