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http://acervodigital.unesp.br/handle/11449/25581
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DC Field | Value | Language |
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dc.contributor.author | Tararam, R. | - |
dc.contributor.author | Joanni, E. | - |
dc.contributor.author | Savu, R. | - |
dc.contributor.author | Bueno, Paulo Roberto | - |
dc.contributor.author | Longo, Elson | - |
dc.contributor.author | Varela, José Arana | - |
dc.date.accessioned | 2014-05-20T14:18:31Z | - |
dc.date.accessioned | 2016-10-25T17:40:35Z | - |
dc.date.available | 2014-05-20T14:18:31Z | - |
dc.date.available | 2016-10-25T17:40:35Z | - |
dc.date.issued | 2011-02-01 | - |
dc.identifier | http://dx.doi.org/10.1021/am101079g | - |
dc.identifier.citation | Acs Applied Materials & Interfaces. Washington: Amer Chemical Soc, v. 3, n. 2, p. 500-504, 2011. | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/11449/25581 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/25581 | - |
dc.description.abstract | Highly aligned CaCu3Ti4O12 nanorod arrays were grown on Si/SiO2/Ti/Pt substrates by radio-frequency sputtering at a low deposition temperature of 300 degrees C and room temperature. Structural and morphological studies have shown that the nanostructures have a polycrystalline nature and are oriented perpendicular to the substrate. The high density of grain boundaries in the nanorods is responsible for the nonlinear current behavior observed in these arrays. The current-voltage (I-V) characteristics observed in nanorods were attributed to the resistive memory phenomenon. The electrical resistance of microcapacitors composed of CaCu3Ti4O12 nanorods could be reversibly switched between two stable resistance states by varying the applied electric field. In order to explain this switching mechanism, a model based on the increase/decrease of electrical conduction controlled by grain boundary polarization has been proposed. | en |
dc.description.sponsorship | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | - |
dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | - |
dc.description.sponsorship | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | - |
dc.format.extent | 500-504 | - |
dc.language.iso | eng | - |
dc.publisher | Amer Chemical Soc | - |
dc.source | Web of Science | - |
dc.subject | CCTO | en |
dc.subject | nanorods | en |
dc.subject | dielectric | en |
dc.subject | nonlinear I-V | en |
dc.subject | resistive switching | en |
dc.subject | RF sputtering | en |
dc.title | Resistive-Switching Behavior in Polycrystalline CaCu3Ti4O12 Nanorods | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.contributor.institution | Ctr Tecnol Informação Renato Archer CTI | - |
dc.contributor.institution | Universidade Estadual de Campinas (UNICAMP) | - |
dc.description.affiliation | Univ Estadual Paulista, Inst Quim Araraquara, Dept Quim Fis, BR-14800900 São Paulo, Brazil | - |
dc.description.affiliation | Ctr Tecnol Informação Renato Archer CTI, BR-13069901 São Paulo, Brazil | - |
dc.description.affiliation | Univ Estadual Campinas, CCS, BR-13083970 Campinas, SP, Brazil | - |
dc.description.affiliationUnesp | Univ Estadual Paulista, Inst Quim Araraquara, Dept Quim Fis, BR-14800900 São Paulo, Brazil | - |
dc.description.sponsorshipId | FAPESP: 06/61758-4 | - |
dc.identifier.doi | 10.1021/am101079g | - |
dc.identifier.wos | WOS:000287639400054 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Acs Applied Materials & Interfaces | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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