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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/25620
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dc.contributor.authorSimões, Alexandre Zirpoli-
dc.contributor.authorAguiar, E. C.-
dc.contributor.authorRiccardi, C. S.-
dc.contributor.authorMoura, F.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T14:18:38Z-
dc.date.accessioned2016-10-25T17:40:39Z-
dc.date.available2014-05-20T14:18:38Z-
dc.date.available2016-10-25T17:40:39Z-
dc.date.issued2009-05-27-
dc.identifierhttp://dx.doi.org/10.1016/j.jallcom.2008.10.138-
dc.identifier.citationJournal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 477, n. 1-2, p. 85-89, 2009.-
dc.identifier.issn0925-8388-
dc.identifier.urihttp://hdl.handle.net/11449/25620-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/25620-
dc.description.abstractTiO(2) buffer layer was introduced between SrBi(4)Ti(4)O(15) (SBTi) thin films and Pt bottom electrodes through the soft chemical solution. The obtained films were characterized by X-ray diffraction, atomic force microscopy and electrical properties. Unlike thin film crystallized directly onto a highly (1 1 1)-oriented Pt bottom electrode, the thin film on TiO(2) buffer layer was a single phase perovskite with random orientation. The dielectric and ferroelectric properties of the SBTi/TiO(2) thin films deposited on Pt coated Si substrates are evaluated, leading to the potential of the TiO(2) buffer layer for the integrated devices. Meanwhile, SBTi thin films deposited directly on (1 1 1) Pt bottom electrode reveal a weak ferroelectricity along c-axis direction. (C) 2008 Published by Elsevier B.V.en
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)-
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)-
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)-
dc.format.extent85-89-
dc.language.isoeng-
dc.publisherElsevier B.V. Sa-
dc.sourceWeb of Science-
dc.subjectThin filmsen
dc.subjectBuffer layeren
dc.subjectBismuth layered compoundsen
dc.titleStructure and ferro/piezoelectric properties of SrBi(4)Ti(4)O(15) films deposited on TiO(2) buffer layeren
dc.typeoutro-
dc.contributor.institutionUniversidade Federal de Itajubá (UNIFEI)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniversidade Federal de Itajubá (UNIFEI) Unifei, BR-3590037 Itabira, MG, Brazil-
dc.description.affiliationUniv Estadual Paulista, Lab Interdisciplinar Ceram, Dept Quim Fis, Inst Quim, BR-14800900 Araraquara, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Lab Interdisciplinar Ceram, Dept Quim Fis, Inst Quim, BR-14800900 Araraquara, SP, Brazil-
dc.identifier.doi10.1016/j.jallcom.2008.10.138-
dc.identifier.wosWOS:000266386400029-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Alloys and Compounds-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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