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http://acervodigital.unesp.br/handle/11449/29740Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Martins, M. R. | - |
| dc.contributor.author | Oliveira, José Brás Barreto de | - |
| dc.contributor.author | Tabata, Américo Sheitiro | - |
| dc.contributor.author | Laureto, E. | - |
| dc.contributor.author | Bettini, J. | - |
| dc.contributor.author | Meneses, E. A. | - |
| dc.contributor.author | Carvalho, M. M. G. | - |
| dc.date.accessioned | 2014-05-20T15:15:41Z | - |
| dc.date.accessioned | 2016-10-25T17:49:34Z | - |
| dc.date.available | 2014-05-20T15:15:41Z | - |
| dc.date.available | 2016-10-25T17:49:34Z | - |
| dc.date.issued | 2004-06-01 | - |
| dc.identifier | http://dx.doi.org/10.1590/S0103-97332004000400022 | - |
| dc.identifier.citation | Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 34, n. 2b, p. 620-622, 2004. | - |
| dc.identifier.issn | 0103-9733 | - |
| dc.identifier.uri | http://hdl.handle.net/11449/29740 | - |
| dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/29740 | - |
| dc.description.abstract | In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van de Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xIn xAs1-yPy. | en |
| dc.description.sponsorship | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | - |
| dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | - |
| dc.description.sponsorship | Fundação para o Desenvolvimento da UNESP (FUNDUNESP) | - |
| dc.format.extent | 620-622 | - |
| dc.language.iso | eng | - |
| dc.publisher | Sociedade Brasileira de Física | - |
| dc.source | SciELO | - |
| dc.title | Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy | en |
| dc.type | outro | - |
| dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
| dc.contributor.institution | Universidade Estadual de Campinas (UNICAMP) | - |
| dc.contributor.institution | Laboratório Nacional de Luz Sincroton - LNLS | - |
| dc.description.affiliation | Universidade Estadual Paulista - UNESP Departamento de Física | - |
| dc.description.affiliation | UNICAMP Instituto de Física Gleb Wathagin | - |
| dc.description.affiliation | Laboratório Nacional de Luz Sincroton - LNLS | - |
| dc.description.affiliationUnesp | Universidade Estadual Paulista - UNESP Departamento de Física | - |
| dc.identifier.doi | 10.1590/S0103-97332004000400022 | - |
| dc.identifier.scielo | S0103-97332004000400022 | - |
| dc.rights.accessRights | Acesso aberto | - |
| dc.identifier.file | S0103-97332004000400022.pdf | - |
| dc.relation.ispartof | Brazilian Journal of Physics | - |
| Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp | |
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