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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/31087
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dc.contributor.authorDe Lima, J. A.-
dc.contributor.authorDualibe, C.-
dc.contributor.authorIEEE-
dc.date.accessioned2014-05-20T15:19:39Z-
dc.date.accessioned2016-10-25T17:52:34Z-
dc.date.available2014-05-20T15:19:39Z-
dc.date.available2016-10-25T17:52:34Z-
dc.date.issued1999-01-01-
dc.identifierhttp://dx.doi.org/10.1109/ISCAS.1999.780846-
dc.identifier.citationIscas '99: Proceedings of the 1999 IEEE International Symposium on Circuits and Systems, Vol 2. New York: IEEE, p. 640-643, 1999.-
dc.identifier.urihttp://hdl.handle.net/11449/31087-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/31087-
dc.description.abstractA linear, tunable CMOS transconductance stage is introduced. Drain voltage of the input transistor operating in triode region is settled by a regulation loop and a first-order linear relationship between g(m) and a de bias voltage is achieved. In addition to easy tuning, this technique offers circuit simplicity, wide dynamic range, high input and output impedances and low consumption. The transconductor is presented on both single-ended and fully-differential versions. A 3rd-order elliptical low-pass g(m)-C filter with a nominal roll-off frequency of 2MHz is used as one example for the many applications of the proposed transconductor. SPICE data describe circuits performances and filter tunabilily Passband is tuned at a rate of 2.36KHz/mV and good linearity is indicated by a 0.89% THD for an 800mV(p-p) balanced-driven input.en
dc.format.extent640-643-
dc.language.isoeng-
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)-
dc.sourceWeb of Science-
dc.titleA tunable triode-MOSFET transconductor and its application to g(m)-C filtersen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniv Estadual Paulista, Dept Elect Engn, BR-12500000 Guaratingueta, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Dept Elect Engn, BR-12500000 Guaratingueta, SP, Brazil-
dc.identifier.doi10.1109/ISCAS.1999.780846-
dc.identifier.wosWOS:000081715200159-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofIscas '99: Proceedings of the 1999 IEEE International Symposium on Circuits and Systems, Vol 2-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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