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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/31880
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dc.contributor.authorMessaddeq, S. H.-
dc.contributor.authorLi, M. S.-
dc.contributor.authorLezal, D.-
dc.contributor.authorMessaddeq, Younes-
dc.date.accessioned2014-05-20T15:20:37Z-
dc.date.accessioned2016-10-25T17:53:47Z-
dc.date.available2014-05-20T15:20:37Z-
dc.date.available2016-10-25T17:53:47Z-
dc.date.issued2002-06-01-
dc.identifierhttp://joam.inoe.ro/arhiva/pdf4_2/Messaddeq.pdf-
dc.identifier.citationJournal of Optoelectronics and Advanced Materials. Bucharest-magurele: Natl Inst Optoelectronics, v. 4, n. 2, p. 375-380, 2002.-
dc.identifier.issn1454-4164-
dc.identifier.urihttp://hdl.handle.net/11449/31880-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/31880-
dc.description.abstractWe report the fabrication of relief diffraction gratings recorded on a surface of photosensitive Ga10Ge25S65 and Ga5Ge25As5S65 glasses by means of interference of two UV laser beams at 351 nm. The diffraction efficiency (eta) of first diffraction order was measured. Atomic-force-microscope (AFM) was used to perform a 3D imaging analysis of the sample surface topography that shows the superposition of an imprinted grating over the topography of the glass. The change in the absorption edge and the refractive index has been evaluated and a structural approach of the relief grating on the glass surface has been discussed.en
dc.format.extent375-380-
dc.language.isoeng-
dc.publisherNatl Inst Optoelectronics-
dc.sourceWeb of Science-
dc.subjectlight-induced effectspt
dc.subjectchalcogenide glassespt
dc.subjectrelief gratingspt
dc.titleRelief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glassesen
dc.typeoutro-
dc.contributor.institutionUniversidade de São Paulo (USP)-
dc.contributor.institutionASCR-
dc.contributor.institutionICT-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUniv São Paulo, Inst Fis, BR-13560970 Sao Carlos, SP, Brazil-
dc.description.affiliationASCR, Lab Inorgan Mat IIC ASCR, Prague 6, Czech Republic-
dc.description.affiliationICT, Prague 6, Czech Republic-
dc.description.affiliationUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil-
dc.description.affiliationUnespUNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil-
dc.identifier.wosWOS:000176427400035-
dc.rights.accessRightsAcesso aberto-
dc.relation.ispartofJournal of Optoelectronics and Advanced Materials-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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