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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/31
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dc.contributor.authorRegone, N. N.-
dc.contributor.authorFreire, CMA-
dc.contributor.authorBallester, M.-
dc.date.accessioned2014-05-20T13:12:01Z-
dc.date.accessioned2016-10-25T16:32:19Z-
dc.date.available2014-05-20T13:12:01Z-
dc.date.available2016-10-25T16:32:19Z-
dc.date.issued2006-02-20-
dc.identifierhttp://dx.doi.org/10.1016/j.jmatprotec.2005.09.005-
dc.identifier.citationJournal of Materials Processing Technology. Lausanne: Elsevier B.V. Sa, v. 172, n. 1, p. 146-151, 2006.-
dc.identifier.issn0924-0136-
dc.identifier.urihttp://hdl.handle.net/11449/31-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/31-
dc.description.abstractIn the present work, the anodic oxide films of Al, Al-Cu 4.5% and Al-Si 6.5% alloys are formed using direct and pulse current. In the case of Al-Cu and Al-Si alloys, the electrolyte used contains sulfuric acid and oxalic acid, meanwhile for Al the electrolyte contains sulfuric acid only. Al-Cu alloy was submitted to a heat treatment in order to decrease the effect of inter metallic phase theta upon the anodic film structure. Fractured samples were observed using a field emission gun scanning electron microscope JSM-6330F at (LME)/Brazilian Synchrotron Light Laboratory (LNLS), Campinas, SP, Brazil. The oxide film images enable evaluation of the pore size and form with a resolution similar to the transmission electron microscope (TEM) resolution. It is also observed that the anodizing process using pulse current produces an irregular structure of pore walls, and by direct cur-rent it is produced a rectilinear pore wall. (c) 2005 Elsevier B.V. All rights reserved.en
dc.format.extent146-151-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.sourceWeb of Science-
dc.subjectanodizingpt
dc.subjectfield emission gun microscopypt
dc.subjectaluminumpt
dc.subjectAl-Cu alloypt
dc.subjectAl-Si alloypt
dc.titleAl-based anodic oxide films structure observation using field emission gun scanning electron microscopyen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)-
dc.description.affiliationUniv Fed São Paulo, UNESP, BR-18409010 Itapeva, SP, Brazil-
dc.description.affiliationUniv Estadual Campinas, Dept Mat Engn, BR-13083970 Campinas, SP, Brazil-
dc.description.affiliationUniv Estadual Campinas, Dept Appl Phys, IFGW, BR-13083970 Campinas, SP, Brazil-
dc.description.affiliationUnespUniv Fed São Paulo, UNESP, BR-18409010 Itapeva, SP, Brazil-
dc.identifier.doi10.1016/j.jmatprotec.2005.09.005-
dc.identifier.wosWOS:000235379700019-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of Materials Processing Technology-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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