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DC Field | Value | Language |
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dc.contributor.author | Tokumoto, M. S. | - |
dc.contributor.author | Smith, A. | - |
dc.contributor.author | Santilli, Celso Valentim | - |
dc.contributor.author | Pulcinelli, Sandra Helena | - |
dc.contributor.author | Elkaim, E. | - |
dc.contributor.author | Briois, V | - |
dc.date.accessioned | 2014-05-20T15:21:18Z | - |
dc.date.accessioned | 2016-10-25T17:54:41Z | - |
dc.date.available | 2014-05-20T15:21:18Z | - |
dc.date.available | 2016-10-25T17:54:41Z | - |
dc.date.issued | 2000-08-01 | - |
dc.identifier | http://dx.doi.org/10.1016/S0022-3093(00)00176-9 | - |
dc.identifier.citation | Journal of Non-crystalline Solids. Amsterdam: Elsevier B.V., v. 273, n. 1-3, p. 302-306, 2000. | - |
dc.identifier.issn | 0022-3093 | - |
dc.identifier.uri | http://hdl.handle.net/11449/32456 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/32456 | - |
dc.description.abstract | Undoped and indium-doped Zinc oxide (ZnO) solid films were deposited by the pyrosol process at 450 degrees C on glass substrates From solutions where In/Zn ratio was 2, 5, and 10 at.%. Electrical measurements performed at room temperature show that the addition of indium changes the resistance of the films. The resistivities of doped films are less than non-doped ZnO films by one to two orders of magnitude depending on the dopant concentration in the solution. Preferential orientation of the films with the c-axis perpendicular to the substrate was detected by X-ray diffraction and polarized extended X-ray absorption fine structures measurements at the Zn K edge. This orientation depends on the indium concentration in the starting solution. The most textured films were obtained for solutions where In/Zn ratio was 2 and 5 at.%. When In/Zn = 10 at.%, the films had a nearly random orientation of crystallites. Evidence of the incorporation of indium in the ZnO lattice was obtained from extended X-ray absorption fine structures at the In and Zn K edges. The structural analysis of the least resistive film (Zn/In = 5 at.%) shows that In substitutes Zn in the wurtzite structure. (C) 2000 Elsevier B.V. B.V. All rights reserved. | en |
dc.format.extent | 302-306 | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.source | Web of Science | - |
dc.title | Effect of In concentration in the starting solution on the structural and electrical properties of ZnO films prepared by the pyrosol process at 450 degrees C | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.contributor.institution | ENSCI | - |
dc.contributor.institution | UPS | - |
dc.description.affiliation | UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil | - |
dc.description.affiliation | ENSCI, GEMH, F-87065 Limoges, France | - |
dc.description.affiliation | UPS, LURE, F-91898 Orsay, France | - |
dc.description.affiliationUnesp | UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil | - |
dc.identifier.doi | 10.1016/S0022-3093(00)00176-9 | - |
dc.identifier.wos | WOS:000088585700048 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Journal of Non-Crystalline Solids | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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