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Please use this identifier to cite or link to this item: http://acervodigital.unesp.br/handle/11449/32530
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dc.contributor.authorPontes, DSL-
dc.contributor.authorLeite, E. R.-
dc.contributor.authorPontes, F. M.-
dc.contributor.authorLongo, Elson-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T15:21:22Z-
dc.date.accessioned2016-10-25T17:54:47Z-
dc.date.available2014-05-20T15:21:22Z-
dc.date.available2016-10-25T17:54:47Z-
dc.date.issued2001-08-01-
dc.identifierhttp://dx.doi.org/10.1016/S0955-2219(00)00307-1-
dc.identifier.citationJournal of the European Ceramic Society. Oxford: Elsevier B.V., v. 21, n. 8, p. 1107-1114, 2001.-
dc.identifier.issn0955-2219-
dc.identifier.urihttp://hdl.handle.net/11449/32530-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/32530-
dc.description.abstractFerroelectric Pb1-xCaxTiO3 (x = 0.24) thin films were formed on a Pt/Ti/SiO2/Si substrate by the polymeric precursor method using the dip-coating technique for their deposition. Characterization of the films bq X-ray diffraction showed a perovskite single phase with a tetragonal structure after annealing at 700 degreesC. Atomic force microscopy (AFM) analyses showed that the film had a smooth and crack-free surface with low surface roughness. In addition, the PCT thin film had a granular structure with an 80 nm grain size. The thickness of the films observed by the scanning electron microscopy (SEM) is 550 nm and there is a good adhesion between the film and substrate. For the electrical measurements metal-ferroelectric-metal of the type capacitors were obtained, where the thin films showed good dielectric and ferroelectric properties. The dielectric constant and dissipation factor at 1 kHz and measured at room temperature were found to be 457 and 0.03. respectively. The remanent polarization and coercive field for the: deposited films were P-r = 17 muC/cm(2) and E-c = 75 kV/cm, respectively. Moreover. The 550-nm-thick film showed a current density in the order of 10(-8) A/cm(2) at the applied voltage of 2 V. The high values of the thin film's dielectric properties are attributed to its excellent microstructural quality and the chemical homogeneity obtained by the polymeric precursor method. (C) 2001 Elsevier science Ltd. All rights reserved.en
dc.format.extent1107-1114-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.sourceWeb of Science-
dc.subjectferroelectric propertiespt
dc.subjectfilmspt
dc.subject(Pb, Ca)TiO3pt
dc.subjectprecursorspt
dc.subjectprecursors-organicpt
dc.titleMicrostructural, dielectric and ferroelectric properties of calcium-modified lead titanate thin films derived by chemical processesen
dc.typeoutro-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)-
dc.description.affiliationUNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil-
dc.description.affiliationUniv Fed Sao Carlos, Dept Chem, BR-13560905 Sao Carlos, SP, Brazil-
dc.description.affiliationUnespUNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil-
dc.identifier.doi10.1016/S0955-2219(00)00307-1-
dc.identifier.wosWOS:000169252500015-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofJournal of the European Ceramic Society-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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