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DC Field | Value | Language |
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dc.contributor.author | Mastelaro, V. R. | - |
dc.contributor.author | Foschini, C. R. | - |
dc.contributor.author | Varela, José Arana | - |
dc.date.accessioned | 2014-05-20T15:22:21Z | - |
dc.date.accessioned | 2016-10-25T17:56:03Z | - |
dc.date.available | 2014-05-20T15:22:21Z | - |
dc.date.available | 2016-10-25T17:56:03Z | - |
dc.date.issued | 2002-08-01 | - |
dc.identifier | http://dx.doi.org/10.1016/S0040-6090(02)00490-X | - |
dc.identifier.citation | Thin Solid Films. Lausanne: Elsevier B.V. Sa, v. 415, n. 1-2, p. 57-63, 2002. | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/11449/33361 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/33361 | - |
dc.description.abstract | Thin films of BaBi2Ta2O9 (BBT) composition were prepared through the metal organic decomposition method. The crystallinity, phase formation, crystallite size and morphology of the thin films were measured as a function of the type of substrate, stoichiometry of solution and process variables such as thickness and temperature. The thin films were investigated by grazing incidence X-ray diffractometry and atomic force microscopy (AFM) techniques. For the sample without excess of bismuth, diffraction peaks other than that of the BBT phase were observed. A well crystallized BBT single phase was observed for films prepared from a solution with 10% excess of bismuth, deposited on Si/Pt substrate, with a thickness up to 150 nm and sintered at temperatures of 700 degreesC. The thin BBT phase films heat-treated at 600 degreesC presented a diffraction pattern characteristic of samples with lower degree of crystallinity whereas for the thin films heat-treated at 800 degreesC, we observed the presence of other phases than the BBT. For the thin film deposited on the Sin+ substrate, we observe that the peaks corresponding to the BBT phase are broader than that observed on the samples deposited on the Pt and Si/Pt substrates. No variation of average crystallite size was observed as the excess of Bi increased from 10 to 20%. AFM images for the samples showed that the increasing the amount of bismuth promotes grain growth. The average surface roughness measured was in the range of 16-22 nm showing that the bismuth amount had no or little effect on the roughness of films. (C) 2002 Elsevier B.V. B.V. All rights reserved. | en |
dc.format.extent | 57-63 | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.source | Web of Science | - |
dc.subject | BaBi2Ta2O9 | pt |
dc.subject | thin films | pt |
dc.subject | X-ray grazing incidence | pt |
dc.subject | crystallization | pt |
dc.title | Grazing incidence X-ray diffraction and atomic force microscopy analysis of BaBi2Ta2O9 thin films | en |
dc.type | outro | - |
dc.contributor.institution | Universidade de São Paulo (USP) | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.contributor.institution | MIT | - |
dc.description.affiliation | Univ São Paulo, Inst Fis Sao Carlos, BR-13566590 Sao Carlos, SP, Brazil | - |
dc.description.affiliation | Univ Estadual Paulista, UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil | - |
dc.description.affiliation | MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA | - |
dc.description.affiliationUnesp | Univ Estadual Paulista, UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil | - |
dc.identifier.doi | 10.1016/S0040-6090(02)00490-X | - |
dc.identifier.wos | WOS:000178198000009 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Thin Solid Films | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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