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dc.contributor.authorPontes, F. M.-
dc.contributor.authorLeite, E. R.-
dc.contributor.authorPontes, DSL-
dc.contributor.authorLongo, Elson-
dc.contributor.authorSantos, EMS-
dc.contributor.authorMergulhao, S.-
dc.contributor.authorPizani, P. S.-
dc.contributor.authorLanciotti, F.-
dc.contributor.authorBoschi, T. M.-
dc.contributor.authorVarela, José Arana-
dc.date.accessioned2014-05-20T15:22:21Z-
dc.date.accessioned2016-10-25T17:56:03Z-
dc.date.available2014-05-20T15:22:21Z-
dc.date.available2016-10-25T17:56:03Z-
dc.date.issued2002-05-01-
dc.identifierhttp://dx.doi.org/10.1063/1.1466526-
dc.identifier.citationJournal of Applied Physics. Melville: Amer Inst Physics, v. 91, n. 9, p. 5972-5978, 2002.-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/11449/33363-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/33363-
dc.description.abstractBarium strontium titanate (Ba0.8Sr0.2TiO3) thin films have been prepared on Pt/Ti/SiO2/Si substrates using a soft solution processing. X-ray diffraction and also micro-Raman spectroscopy showed that the Ba0.8Sr0.2TiO3 thin films exhibited a tetragonal structure at room temperature. The presence of Raman active modes was clearly shown at the 299 and 725 cm(-1) peaks. The tetragonal-to-cubic phase transition in the Ba0.8Sr0.2TiO3 thin films is broadened, and suppressed at about 35 degreesC, with a maximum dielectric constant of 948 (100 kHz). Electrical measurements for the prepared Ba0.8Sr0.2TiO3 thin films showed a remnant polarization (P-r) of 6.5 muC/cm(2), a coercive field (E-c) of 41 kV/cm, and good insulating properties. The dispersion of the refractive index is interpreted in terms of a single electronic oscillator at 6.97 eV. The direct band gap energy (E-g) and the refractive index (n) are estimated to be 3.3 eV and n = 2.27-2.10, respectively. (C) 2002 American Institute of Physics.en
dc.format.extent5972-5978-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics (AIP)-
dc.sourceWeb of Science-
dc.titleFerroelectric and optical properties of Ba0.8Sr0.2TiO3 thin filmen
dc.typeoutro-
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationUFSCar, Dept Chem, CMDMC, LIEC, BR-13565905 Sao Carlos, SP, Brazil-
dc.description.affiliationUFSCar, Dept Phys, BR-13565905 Sao Carlos, SP, Brazil-
dc.description.affiliationUNESP, Inst Chem, Araraquara, SP, Brazil-
dc.description.affiliationUnespUNESP, Inst Chem, Araraquara, SP, Brazil-
dc.identifier.doi10.1063/1.1466526-
dc.identifier.wosWOS:000175069000066-
dc.rights.accessRightsAcesso restrito-
dc.identifier.fileWOS000175069000066.pdf-
dc.relation.ispartofJournal of Applied Physics-
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