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DC Field | Value | Language |
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dc.contributor.author | Zanetti, S. M. | - |
dc.contributor.author | Araujo, E. B. | - |
dc.contributor.author | Leite, E. R. | - |
dc.contributor.author | Longo, Elson | - |
dc.contributor.author | Varela, José Arana | - |
dc.date.accessioned | 2014-05-20T15:22:23Z | - |
dc.date.accessioned | 2016-10-25T17:56:05Z | - |
dc.date.available | 2014-05-20T15:22:23Z | - |
dc.date.available | 2016-10-25T17:56:05Z | - |
dc.date.issued | 1999-07-01 | - |
dc.identifier | http://dx.doi.org/10.1016/S0167-577X(99)00045-2 | - |
dc.identifier.citation | Materials Letters. Amsterdam: Elsevier B.V., v. 40, n. 1, p. 33-38, 1999. | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.uri | http://hdl.handle.net/11449/33383 | - |
dc.identifier.uri | http://acervodigital.unesp.br/handle/11449/33383 | - |
dc.description.abstract | SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by dip coating onto Pt/Ti/SiO2/Si(100) substrates. The dip-coated films were specular and crack-free and crystallized during firing at 700 degrees C. Microstructure and morphological evaluation were followed by grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films exhibited somewhat porous grain structure with rounded grains of about 100 nm. For the electrical measurements, gold electrodes of 300 mu m in diameter were sputter deposited on the top surface, forming a metal-ferroelectric-metal (MFM) configuration. The remanent polarization (P-r) and coercive field (E-c) were 5.6 mu C/cm(2) and 100 kV/cm, respectively. (C) 1999 Elsevier B.V. B.V. All rights reserved. | en |
dc.format.extent | 33-38 | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier B.V. | - |
dc.source | Web of Science | - |
dc.subject | ferroelectric | pt |
dc.subject | SrBi2Ta2O9 | pt |
dc.subject | bismuth layer | pt |
dc.subject | thin films | pt |
dc.subject | Pt/Ti/SiO2/Si substrates | pt |
dc.subject | perovskite phase | pt |
dc.title | Structural and electrical properties of SrBi2Nb2O9 thin films prepared by chemical aqueous solution at low temperature | en |
dc.type | outro | - |
dc.contributor.institution | Universidade Federal de São Carlos (UFSCar) | - |
dc.contributor.institution | Universidade Estadual Paulista (UNESP) | - |
dc.description.affiliation | UFSCar, Dept Quim, BR-13560905 Sao Carlos, SP, Brazil | - |
dc.description.affiliation | UFSCar, Dept Fis, BR-13560905 Sao Carlos, SP, Brazil | - |
dc.description.affiliation | UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil | - |
dc.description.affiliationUnesp | UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil | - |
dc.identifier.doi | 10.1016/S0167-577X(99)00045-2 | - |
dc.identifier.wos | WOS:000081494600008 | - |
dc.rights.accessRights | Acesso restrito | - |
dc.relation.ispartof | Materials Letters | - |
Appears in Collections: | Artigos, TCCs, Teses e Dissertações da Unesp |
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