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dc.contributor.authorLegnani, C.-
dc.contributor.authorLima, S. A. M.-
dc.contributor.authorOliveira, H. H. S.-
dc.contributor.authorQuirino, W. G.-
dc.contributor.authorMachado, R.-
dc.contributor.authorSantos, R. M. B.-
dc.contributor.authorDavolos, Marian Rosaly-
dc.contributor.authorAchete, C. A.-
dc.contributor.authorCremona, M.-
dc.date.accessioned2014-05-20T15:23:00Z-
dc.date.accessioned2016-10-25T17:56:49Z-
dc.date.available2014-05-20T15:23:00Z-
dc.date.available2016-10-25T17:56:49Z-
dc.date.issued2007-12-03-
dc.identifierhttp://dx.doi.org/10.1016/j.tsf.2007.06.137-
dc.identifier.citationThin Solid Films. Lausanne: Elsevier B.V. Sa, v. 516, n. 2-4, p. 193-197, 2007.-
dc.identifier.issn0040-6090-
dc.identifier.urihttp://hdl.handle.net/11449/33870-
dc.identifier.urihttp://acervodigital.unesp.br/handle/11449/33870-
dc.description.abstractIn this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an alpha-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 degrees C. A 10 at.% of doping of Sn4+ ions into an In2O3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10(-3) Omega cm, 2.9 cm(2)/V s and -3.5 x 10(20)/cm(3), respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained. (C) 2007 Elsevier B.V. All rights reserved.en
dc.format.extent193-197-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.sourceWeb of Science-
dc.subjectindium tin oxidept
dc.subjectITOpt
dc.subjectwet chemical routept
dc.subjectPechinipt
dc.subjectXPSpt
dc.titleIndium tin oxide films prepared via wet chemical routeen
dc.typeoutro-
dc.contributor.institutionPontifícia Universidade Católica do Rio de Janeiro (PUC-Rio)-
dc.contributor.institutionDIMAT-
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)-
dc.description.affiliationPontificia Univ Catolica Rio de Janeiro, Rio de Janeiro, Brazil-
dc.description.affiliationDIMAT, Inst Nacl Metrol & Qualidade Ind Inmetro, Duque de Caxias, RJ, Brazil-
dc.description.affiliationUniv Estadual Paulista, Inst Quim, Araraquara, SP, Brazil-
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, Araraquara, SP, Brazil-
dc.identifier.doi10.1016/j.tsf.2007.06.137-
dc.identifier.wosWOS:000252037500017-
dc.rights.accessRightsAcesso restrito-
dc.relation.ispartofThin Solid Films-
Appears in Collections:Artigos, TCCs, Teses e Dissertações da Unesp

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